JPS5668070A - Pyroelectric image sensor - Google Patents

Pyroelectric image sensor

Info

Publication number
JPS5668070A
JPS5668070A JP14510779A JP14510779A JPS5668070A JP S5668070 A JPS5668070 A JP S5668070A JP 14510779 A JP14510779 A JP 14510779A JP 14510779 A JP14510779 A JP 14510779A JP S5668070 A JPS5668070 A JP S5668070A
Authority
JP
Japan
Prior art keywords
electrode
silicon wafer
gate electrode
mos
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14510779A
Other languages
Japanese (ja)
Other versions
JPS6366468B2 (en
Inventor
Aisaku Nagai
Naohiro Murayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kureha Corp
Original Assignee
Kureha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kureha Corp filed Critical Kureha Corp
Priority to JP14510779A priority Critical patent/JPS5668070A/en
Publication of JPS5668070A publication Critical patent/JPS5668070A/en
Publication of JPS6366468B2 publication Critical patent/JPS6366468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers

Abstract

PURPOSE:To make it possible to obtain a composite pyroelectric element, by arranging plural MOS transistor circuits for impedance conversion, where a part of the small-size electrode is used as a gate electrode, in one silicon wafer to form the element. CONSTITUTION:Common earth electrode 3 is provided on the surface of polyvinylidene fluoride film 2, and integrated MOS transistor chip 5 where the MOS- FET transistor group is arranged is joined onto the opposite surface through adhesive layer 4. In transistor chip 5, the extension part of metal vapor-deposited film electrode 8 provided on oxide film 7 of silicon wafer 6 is used as the gate electrode, and plural impedance conversion MOS transistors 12 constituted by source electrode 10 and drain electrode 11 which are provided in the silicon layer under the gate electrode by the impurity diffusion method are arranged in silicon wafer 6. Composite pyroelectric element 1 has this constitution.
JP14510779A 1979-11-09 1979-11-09 Pyroelectric image sensor Granted JPS5668070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14510779A JPS5668070A (en) 1979-11-09 1979-11-09 Pyroelectric image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14510779A JPS5668070A (en) 1979-11-09 1979-11-09 Pyroelectric image sensor

Publications (2)

Publication Number Publication Date
JPS5668070A true JPS5668070A (en) 1981-06-08
JPS6366468B2 JPS6366468B2 (en) 1988-12-20

Family

ID=15377533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14510779A Granted JPS5668070A (en) 1979-11-09 1979-11-09 Pyroelectric image sensor

Country Status (1)

Country Link
JP (1) JPS5668070A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2795564B2 (en) * 1991-10-08 1998-09-10 アロカ 株式会社 Dilution method for highly viscous liquid

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021781U (en) * 1983-07-19 1985-02-14 日本ワ−ドプロセツサ株式会社 CRT display hood

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021781U (en) * 1983-07-19 1985-02-14 日本ワ−ドプロセツサ株式会社 CRT display hood

Also Published As

Publication number Publication date
JPS6366468B2 (en) 1988-12-20

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