JPS5667980A - Semiconductor laser system and preparation method thereof - Google Patents

Semiconductor laser system and preparation method thereof

Info

Publication number
JPS5667980A
JPS5667980A JP14477779A JP14477779A JPS5667980A JP S5667980 A JPS5667980 A JP S5667980A JP 14477779 A JP14477779 A JP 14477779A JP 14477779 A JP14477779 A JP 14477779A JP S5667980 A JPS5667980 A JP S5667980A
Authority
JP
Japan
Prior art keywords
face
laser system
protective film
distribution corresponding
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14477779A
Other languages
Japanese (ja)
Inventor
Shozo Watabe
Osamu Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP14477779A priority Critical patent/JPS5667980A/en
Publication of JPS5667980A publication Critical patent/JPS5667980A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0267—Integrated focusing lens

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To prevent deterioration of an oscillating end face and to improve the laser characteristics by stabilizing an oscillation mode by a method wherein a protective film having a reflection factor distribution corresponding to an oscillation mode is vapored to an oscillation end face of a laser system. CONSTITUTION:A protective film 11 having a reflection factor distribution corresponding to an oscillation mode is attached to an oscillating end face 4a of a semiconductor laser system 1. And further, within a vapor growth atmosphere of SiO2, Si3N4, etc. the laser system 1 is made to oscillate and the protective film 11 as aforementioned is vapored on the oscillating end face. For example, the laser system having a constitution as shown in a figure is installed in a CVD furnace 9 taking Ar as a carrier gas, and in an atmosphere wherein SiH4 and N2O are supplied, the system 1 is made to oscillate in a fundamental mode. And only at an injection face 4a of a laser light 10 in an activated area 4, the SiO2 film having a film thickness distribution corresponding to the fundamental mode is made to vapor grow.
JP14477779A 1979-11-08 1979-11-08 Semiconductor laser system and preparation method thereof Pending JPS5667980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14477779A JPS5667980A (en) 1979-11-08 1979-11-08 Semiconductor laser system and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14477779A JPS5667980A (en) 1979-11-08 1979-11-08 Semiconductor laser system and preparation method thereof

Publications (1)

Publication Number Publication Date
JPS5667980A true JPS5667980A (en) 1981-06-08

Family

ID=15370182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14477779A Pending JPS5667980A (en) 1979-11-08 1979-11-08 Semiconductor laser system and preparation method thereof

Country Status (1)

Country Link
JP (1) JPS5667980A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948977A (en) * 1982-09-14 1984-03-21 Nec Corp Manufacture of laser diode
JP2006228892A (en) * 2005-02-16 2006-08-31 Matsushita Electric Ind Co Ltd Semiconductor light emitting element and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948977A (en) * 1982-09-14 1984-03-21 Nec Corp Manufacture of laser diode
JP2006228892A (en) * 2005-02-16 2006-08-31 Matsushita Electric Ind Co Ltd Semiconductor light emitting element and its manufacturing method

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