JPS5661157A - C-mos memory - Google Patents
C-mos memoryInfo
- Publication number
- JPS5661157A JPS5661157A JP13805979A JP13805979A JPS5661157A JP S5661157 A JPS5661157 A JP S5661157A JP 13805979 A JP13805979 A JP 13805979A JP 13805979 A JP13805979 A JP 13805979A JP S5661157 A JPS5661157 A JP S5661157A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- memory
- elements
- input circuit
- type polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 230000000295 complement effect Effects 0.000 abstract 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 2
- 230000004044 response Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To make the size of a memory smaller by a method wherein a complementary connecting inverter which is a P and N channel element with N type polycrystalline Si as a gate is used as an input circuit, while a pair of P channel composed of P type polycrystalline Si and N channel composed of N type polycrystalline Si are used for a circuit inside the memory. CONSTITUTION:A C-MOS memory is constructed by a input circuit and a circuit inside the memory. Of these two elements, the circuit inside the memory consists as usual of a P channel made of P type crystalline Si and an N channel of N type crystalline Si. Although the input circuit is constituted by an inverter in which P and N channel elements are complementary connected, gate electrodes 211 and 212 to be provided with the elements are not to be used separately depending upon the types P and N, but formed with the N type polycrystalline Si uniformly. By so doing, the threshold voltages of the two elements become approximately the same, while the input circuit can be made smaller without reducing the response speed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13805979A JPS5661157A (en) | 1979-10-25 | 1979-10-25 | C-mos memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13805979A JPS5661157A (en) | 1979-10-25 | 1979-10-25 | C-mos memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5661157A true JPS5661157A (en) | 1981-05-26 |
Family
ID=15213013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13805979A Pending JPS5661157A (en) | 1979-10-25 | 1979-10-25 | C-mos memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5661157A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413779A (en) * | 1977-07-04 | 1979-02-01 | Toshiba Corp | Semiconductor integrated circuit device |
-
1979
- 1979-10-25 JP JP13805979A patent/JPS5661157A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5413779A (en) * | 1977-07-04 | 1979-02-01 | Toshiba Corp | Semiconductor integrated circuit device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5472412A (en) | Motor speed control circuit | |
| JPS5661157A (en) | C-mos memory | |
| JPS5384486A (en) | Electric charge coupled element | |
| JPS5617515A (en) | Flip-flop circuit | |
| JPS5267557A (en) | Logical circuit | |
| JPS52125244A (en) | Memory circuit | |
| JPS5641586A (en) | Memory readout circuit | |
| JPS55166952A (en) | Bistable circuit | |
| JPS5315055A (en) | Logic circuit | |
| JPS5278327A (en) | Semiconductor memory | |
| JPS52144954A (en) | Inverter circuit | |
| JPS5313470A (en) | Electronic timepiece | |
| JPS542042A (en) | Oscillation circuit | |
| JPS5323546A (en) | Bias circuit | |
| JPS55134536A (en) | Signal level discriminator | |
| JPS53110452A (en) | Complementary field effect type transistor circuit | |
| JPS5282036A (en) | Signal processing of electric charge transfer memory | |
| JPS5260544A (en) | Signal converter circuit | |
| JPS522157A (en) | Mis output circuit | |
| JPS5429531A (en) | Sense circuit for cmos static random access memory | |
| JPS52116129A (en) | Logical circuit | |
| JPS5292466A (en) | Hysteresis gate circuit | |
| JPS5210654A (en) | Transmission circuit equalization mode | |
| JPS5351984A (en) | Semiconductor device | |
| JPS51129163A (en) | Wave form rectification circuit |