JPS5292466A - Hysteresis gate circuit - Google Patents

Hysteresis gate circuit

Info

Publication number
JPS5292466A
JPS5292466A JP847476A JP847476A JPS5292466A JP S5292466 A JPS5292466 A JP S5292466A JP 847476 A JP847476 A JP 847476A JP 847476 A JP847476 A JP 847476A JP S5292466 A JPS5292466 A JP S5292466A
Authority
JP
Japan
Prior art keywords
gate circuit
hysteresis gate
hysteresis
elements
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP847476A
Other languages
Japanese (ja)
Other versions
JPS5813046B2 (en
Inventor
Toru Kobayashi
Takahiro Okabe
Kenji Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51008474A priority Critical patent/JPS5813046B2/en
Publication of JPS5292466A publication Critical patent/JPS5292466A/en
Publication of JPS5813046B2 publication Critical patent/JPS5813046B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger

Abstract

PURPOSE:To lessen the number of the circuit elements, reduce the power consumption and also obtain the threshold value voltage of the constant value, which is not subject to the variations of elements and the power supply voltage.
JP51008474A 1976-01-30 1976-01-30 Hysteresis gate circuit Expired JPS5813046B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51008474A JPS5813046B2 (en) 1976-01-30 1976-01-30 Hysteresis gate circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51008474A JPS5813046B2 (en) 1976-01-30 1976-01-30 Hysteresis gate circuit

Publications (2)

Publication Number Publication Date
JPS5292466A true JPS5292466A (en) 1977-08-03
JPS5813046B2 JPS5813046B2 (en) 1983-03-11

Family

ID=11694098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51008474A Expired JPS5813046B2 (en) 1976-01-30 1976-01-30 Hysteresis gate circuit

Country Status (1)

Country Link
JP (1) JPS5813046B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35953E (en) * 1980-03-31 1998-11-10 Fujitsu Limited Semiconductor dynamic memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146455U (en) * 1974-05-20 1975-12-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146455U (en) * 1974-05-20 1975-12-04

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35953E (en) * 1980-03-31 1998-11-10 Fujitsu Limited Semiconductor dynamic memory device

Also Published As

Publication number Publication date
JPS5813046B2 (en) 1983-03-11

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