JPS5656675A - Semiconductor device on insulated substrate - Google Patents
Semiconductor device on insulated substrateInfo
- Publication number
- JPS5656675A JPS5656675A JP13241679A JP13241679A JPS5656675A JP S5656675 A JPS5656675 A JP S5656675A JP 13241679 A JP13241679 A JP 13241679A JP 13241679 A JP13241679 A JP 13241679A JP S5656675 A JPS5656675 A JP S5656675A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- layer
- thin
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010408 film Substances 0.000 abstract 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
- H01L29/78657—SOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13241679A JPS5656675A (en) | 1979-10-16 | 1979-10-16 | Semiconductor device on insulated substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13241679A JPS5656675A (en) | 1979-10-16 | 1979-10-16 | Semiconductor device on insulated substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5656675A true JPS5656675A (en) | 1981-05-18 |
Family
ID=15080858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13241679A Pending JPS5656675A (en) | 1979-10-16 | 1979-10-16 | Semiconductor device on insulated substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5656675A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710266A (en) * | 1980-06-23 | 1982-01-19 | Fujitsu Ltd | Mis field effect semiconductor device |
| US5485020A (en) * | 1983-03-15 | 1996-01-16 | Canon Kabushiki Kaisha | Semiconductor device including a thin film transistor and a wiring portion having the same layered structure as and being integral with a source region or drain region of the transistor |
-
1979
- 1979-10-16 JP JP13241679A patent/JPS5656675A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710266A (en) * | 1980-06-23 | 1982-01-19 | Fujitsu Ltd | Mis field effect semiconductor device |
| JPS6331945B2 (ja) * | 1980-06-23 | 1988-06-27 | Fujitsu Ltd | |
| US5485020A (en) * | 1983-03-15 | 1996-01-16 | Canon Kabushiki Kaisha | Semiconductor device including a thin film transistor and a wiring portion having the same layered structure as and being integral with a source region or drain region of the transistor |
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