JPS565398A - Process for gaseous phase growth - Google Patents
Process for gaseous phase growthInfo
- Publication number
- JPS565398A JPS565398A JP8107879A JP8107879A JPS565398A JP S565398 A JPS565398 A JP S565398A JP 8107879 A JP8107879 A JP 8107879A JP 8107879 A JP8107879 A JP 8107879A JP S565398 A JPS565398 A JP S565398A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- layer
- temperature
- gaseous phase
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a given distribution of impurities in a gaseous phase growth layer by a simplified method in which the temperature of a container contg. the source material for the impurities to be added to the gaseous phase growth layer is quickly lowered by dipping it in a liquid of a fixed temperature lower than its holding temperature.
CONSTITUTION: A high resistance of a buffer layer is grown in several μm on Ga3 by sending an AsCl3 gas-containing carrier gas (H2 or N2) through the gas path 5 and the AsCl3 bubble container 4. Since the layer is nondoped, only carrier gas is sent through the path 8. Then, when forming an operating layer, the supply of gas through the gas paths 5 and 8 is left unchanged and the gas path 7 is opened, whereupon the carrier gas containing S gas from the S container 6 kept at 70°C by the constant-temperature tank 11 is sent into the reactor tube 1. After several seconds, water in the constant-temperature tank 11 is withdrawn, the tank 11 is set to 0°C, water kept at 0°C in advance is injected, and a thickness of 0.2μm of an operating layer is grown while reducing the vapor pressure of S gas contained in the carrier gas.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8107879A JPS565398A (en) | 1979-06-27 | 1979-06-27 | Process for gaseous phase growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8107879A JPS565398A (en) | 1979-06-27 | 1979-06-27 | Process for gaseous phase growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS565398A true JPS565398A (en) | 1981-01-20 |
JPS5720280B2 JPS5720280B2 (en) | 1982-04-27 |
Family
ID=13736349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8107879A Granted JPS565398A (en) | 1979-06-27 | 1979-06-27 | Process for gaseous phase growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS565398A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5987760U (en) * | 1982-12-07 | 1984-06-14 | ダスキンフランチヤイズ株式会社 | Matsuto fixture |
JPS59115977U (en) * | 1983-01-25 | 1984-08-04 | 株式会社鹿田産業 | Non-slip rattan or bamboo rug |
-
1979
- 1979-06-27 JP JP8107879A patent/JPS565398A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5720280B2 (en) | 1982-04-27 |
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