JPS565398A - Process for gaseous phase growth - Google Patents

Process for gaseous phase growth

Info

Publication number
JPS565398A
JPS565398A JP8107879A JP8107879A JPS565398A JP S565398 A JPS565398 A JP S565398A JP 8107879 A JP8107879 A JP 8107879A JP 8107879 A JP8107879 A JP 8107879A JP S565398 A JPS565398 A JP S565398A
Authority
JP
Japan
Prior art keywords
gas
layer
temperature
gaseous phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8107879A
Other languages
Japanese (ja)
Other versions
JPS5720280B2 (en
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8107879A priority Critical patent/JPS565398A/en
Publication of JPS565398A publication Critical patent/JPS565398A/en
Publication of JPS5720280B2 publication Critical patent/JPS5720280B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a given distribution of impurities in a gaseous phase growth layer by a simplified method in which the temperature of a container contg. the source material for the impurities to be added to the gaseous phase growth layer is quickly lowered by dipping it in a liquid of a fixed temperature lower than its holding temperature.
CONSTITUTION: A high resistance of a buffer layer is grown in several μm on Ga3 by sending an AsCl3 gas-containing carrier gas (H2 or N2) through the gas path 5 and the AsCl3 bubble container 4. Since the layer is nondoped, only carrier gas is sent through the path 8. Then, when forming an operating layer, the supply of gas through the gas paths 5 and 8 is left unchanged and the gas path 7 is opened, whereupon the carrier gas containing S gas from the S container 6 kept at 70°C by the constant-temperature tank 11 is sent into the reactor tube 1. After several seconds, water in the constant-temperature tank 11 is withdrawn, the tank 11 is set to 0°C, water kept at 0°C in advance is injected, and a thickness of 0.2μm of an operating layer is grown while reducing the vapor pressure of S gas contained in the carrier gas.
COPYRIGHT: (C)1981,JPO&Japio
JP8107879A 1979-06-27 1979-06-27 Process for gaseous phase growth Granted JPS565398A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8107879A JPS565398A (en) 1979-06-27 1979-06-27 Process for gaseous phase growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8107879A JPS565398A (en) 1979-06-27 1979-06-27 Process for gaseous phase growth

Publications (2)

Publication Number Publication Date
JPS565398A true JPS565398A (en) 1981-01-20
JPS5720280B2 JPS5720280B2 (en) 1982-04-27

Family

ID=13736349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8107879A Granted JPS565398A (en) 1979-06-27 1979-06-27 Process for gaseous phase growth

Country Status (1)

Country Link
JP (1) JPS565398A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5987760U (en) * 1982-12-07 1984-06-14 ダスキンフランチヤイズ株式会社 Matsuto fixture
JPS59115977U (en) * 1983-01-25 1984-08-04 株式会社鹿田産業 Non-slip rattan or bamboo rug

Also Published As

Publication number Publication date
JPS5720280B2 (en) 1982-04-27

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