JPS565397A - Gaseous phase growth device - Google Patents

Gaseous phase growth device

Info

Publication number
JPS565397A
JPS565397A JP8107779A JP8107779A JPS565397A JP S565397 A JPS565397 A JP S565397A JP 8107779 A JP8107779 A JP 8107779A JP 8107779 A JP8107779 A JP 8107779A JP S565397 A JPS565397 A JP S565397A
Authority
JP
Japan
Prior art keywords
gas
container
epitaxial growth
kept
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8107779A
Other languages
Japanese (ja)
Other versions
JPS5715078B2 (en
Inventor
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8107779A priority Critical patent/JPS565397A/en
Publication of JPS565397A publication Critical patent/JPS565397A/en
Publication of JPS5715078B2 publication Critical patent/JPS5715078B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a gaseous phase growth device capable of forming a stable concentration of epitaxial growth layer by using a dopant container having a cylindrical structure with an inlet for a gas into the container through a gas passage encircling twice or more along the outer wall of the container.
CONSTITUTION: The container 21 made of quartz, having the gas inlet 22 and the gas outlet 23, is fitted to the gas introduction portion 23 through which a gas is turned four and half times around the outer wall of the container 21 and then directed into the inside of the container. For example, when the container 21 is kept at 65°C in a constant-temperature tank and then N2 gas is flowed into the gas inlet 22, the temperature of N2 gas becomes a fixed temperature of 65°C because it passes by a long distance of 4.5πD≈14D (D is the diameter of the container) before reaching the sulfur 25 and therefore the vapor pressure is kept at a given value at all times. On the other hand, because the flow rate of gas is kept constant with high accuracy, the variation of the concentration of sulfur sent into the epitaxial growth reaction tube is small and therefore epitaxial growth layer of a given carrier concentration can be stably obtained.
COPYRIGHT: (C)1981,JPO&Japio
JP8107779A 1979-06-27 1979-06-27 Gaseous phase growth device Granted JPS565397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8107779A JPS565397A (en) 1979-06-27 1979-06-27 Gaseous phase growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8107779A JPS565397A (en) 1979-06-27 1979-06-27 Gaseous phase growth device

Publications (2)

Publication Number Publication Date
JPS565397A true JPS565397A (en) 1981-01-20
JPS5715078B2 JPS5715078B2 (en) 1982-03-27

Family

ID=13736319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8107779A Granted JPS565397A (en) 1979-06-27 1979-06-27 Gaseous phase growth device

Country Status (1)

Country Link
JP (1) JPS565397A (en)

Also Published As

Publication number Publication date
JPS5715078B2 (en) 1982-03-27

Similar Documents

Publication Publication Date Title
NO905611D0 (en) MULTIPLE PHASE MIXING AND MEASURING SYSTEM.
SE9504580L (en) Procedure for gasification of an anesthetic fluid and a carburetor
US3856204A (en) Gas emitting device
Teckentrup et al. Preparation of refillable permeation tubes
WO1990011822A3 (en) Gas flow control apparatus
JPS565397A (en) Gaseous phase growth device
GB1076465A (en) Process for the preparation of crystalline semiconductor material
JPS57188424A (en) Manufacture of base material for glass fiber
JPS56137639A (en) Decompression vapor growth device
Huang et al. Determination of Gas‐Vapor Binary Diffusion Coefficient by Gas Chromatography
JPS5334693A (en) Ozone generating apparatus
JPS5976870A (en) Formation of oxide film by chemical vapor deposition
JPS565398A (en) Process for gaseous phase growth
SU1409868A1 (en) Diffusion microconcentration meter
JPS5753930A (en) Device for chemical gaseous-phase growing
JPS6422334A (en) Mixer
JPS56155639A (en) Apparatus for treatment of powder with microwave plasma
JPS5587425A (en) Doping method for epitaxial layer of semiconductor
SU445465A1 (en) Laboratory device for gas saturation with liquid vapor
JPS5571616A (en) Vapor phase growing treatment method
SU559720A1 (en) Mixer
JPS57157530A (en) Forming method for insulator thin-film
WAHL The role of gravity in flow processes during chemical vapor deposition/CVD
TEMPS et al. Research into product structure of oxygen with ethylene reactions
Jack Apparatus. An effusiometer for measuring gas densities in continuous flow systems or in closed systems