JPS5653213B2 - - Google Patents
Info
- Publication number
- JPS5653213B2 JPS5653213B2 JP11397674A JP11397674A JPS5653213B2 JP S5653213 B2 JPS5653213 B2 JP S5653213B2 JP 11397674 A JP11397674 A JP 11397674A JP 11397674 A JP11397674 A JP 11397674A JP S5653213 B2 JPS5653213 B2 JP S5653213B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/6309—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P14/6322—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/116—Oxidation, differential
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US411518A US3899372A (en) | 1973-10-31 | 1973-10-31 | Process for controlling insulating film thickness across a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5075771A JPS5075771A (en:Method) | 1975-06-21 |
| JPS5653213B2 true JPS5653213B2 (en:Method) | 1981-12-17 |
Family
ID=23629264
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11397674A Expired JPS5653213B2 (en:Method) | 1973-10-31 | 1974-10-04 | |
| JP12074180A Granted JPS5635427A (en) | 1973-10-31 | 1980-09-02 | Method of manufacturing semiconductor device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12074180A Granted JPS5635427A (en) | 1973-10-31 | 1980-09-02 | Method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3899372A (en:Method) |
| JP (2) | JPS5653213B2 (en:Method) |
| DE (1) | DE2445879C2 (en:Method) |
| FR (1) | FR2250199B1 (en:Method) |
| GB (1) | GB1481196A (en:Method) |
| IT (1) | IT1022974B (en:Method) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3968562A (en) * | 1971-11-25 | 1976-07-13 | U.S. Philips Corporation | Method of manufacturing a semiconductor device |
| DE2409910C3 (de) * | 1974-03-01 | 1979-03-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer Halbleiteranordnung |
| JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
| DE2621765A1 (de) * | 1975-06-30 | 1977-01-20 | Ibm | Halbleiteranordnung und verfahren zur herstellung einer derartigen anordnung |
| US4056825A (en) * | 1975-06-30 | 1977-11-01 | International Business Machines Corporation | FET device with reduced gate overlap capacitance of source/drain and method of manufacture |
| US4049477A (en) * | 1976-03-02 | 1977-09-20 | Hewlett-Packard Company | Method for fabricating a self-aligned metal oxide field effect transistor |
| DE2803431A1 (de) * | 1978-01-26 | 1979-08-02 | Siemens Ag | Verfahren zur herstellung von mos-transistoren |
| US4151010A (en) * | 1978-06-30 | 1979-04-24 | International Business Machines Corporation | Forming adjacent impurity regions in a semiconductor by oxide masking |
| JPS5550641A (en) * | 1978-10-05 | 1980-04-12 | Nec Corp | Semiconductor device |
| US4304042A (en) * | 1978-11-13 | 1981-12-08 | Xerox Corporation | Self-aligned MESFETs having reduced series resistance |
| JPS5651870A (en) * | 1979-10-05 | 1981-05-09 | Oki Electric Ind Co Ltd | Manufacture of complementary type mos semiconductor device |
| US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
| DE3318213A1 (de) * | 1983-05-19 | 1984-11-22 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zum herstellen eines integrierten isolierschicht-feldeffekttransistors mit zur gateelektrode selbstausgerichteten kontakten |
| US4635344A (en) * | 1984-08-20 | 1987-01-13 | Texas Instruments Incorporated | Method of low encroachment oxide isolation of a semiconductor device |
| US4737828A (en) * | 1986-03-17 | 1988-04-12 | General Electric Company | Method for gate electrode fabrication and symmetrical and non-symmetrical self-aligned inlay transistors made therefrom |
| JP2609619B2 (ja) * | 1987-08-25 | 1997-05-14 | 三菱電機株式会社 | 半導体装置 |
| US5817581A (en) * | 1995-04-21 | 1998-10-06 | International Business Machines Corporation | Process for the creation of a thermal SiO2 layer with extremely uniform layer thickness |
| US6214127B1 (en) | 1998-02-04 | 2001-04-10 | Micron Technology, Inc. | Methods of processing electronic device workpieces and methods of positioning electronic device workpieces within a workpiece carrier |
| US6440382B1 (en) * | 1999-08-31 | 2002-08-27 | Micron Technology, Inc. | Method for producing water for use in manufacturing semiconductors |
| WO2008090490A2 (en) * | 2007-01-22 | 2008-07-31 | Koninklijke Philips Electronics N.V. | Robotic cleaning head |
| CN102034706B (zh) * | 2009-09-29 | 2012-03-21 | 上海华虹Nec电子有限公司 | 控制硅锗合金刻面生长效果的方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1103542A (en) * | 1963-08-23 | 1968-02-14 | Plessey Uk Ltd | Improvements in or relating to semiconductor devices |
| US3473093A (en) * | 1965-08-18 | 1969-10-14 | Ibm | Semiconductor device having compensated barrier zones between n-p junctions |
| US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
| US3756876A (en) * | 1970-10-27 | 1973-09-04 | Cogar Corp | Fabrication process for field effect and bipolar transistor devices |
| JPS5415663B2 (en:Method) * | 1971-12-29 | 1979-06-16 |
-
1973
- 1973-10-31 US US411518A patent/US3899372A/en not_active Expired - Lifetime
-
1974
- 1974-09-02 FR FR7430669A patent/FR2250199B1/fr not_active Expired
- 1974-09-26 DE DE2445879A patent/DE2445879C2/de not_active Expired
- 1974-10-04 JP JP11397674A patent/JPS5653213B2/ja not_active Expired
- 1974-10-11 GB GB44122/74A patent/GB1481196A/en not_active Expired
- 1974-10-18 IT IT28569/74A patent/IT1022974B/it active
-
1980
- 1980-09-02 JP JP12074180A patent/JPS5635427A/ja active Granted
Non-Patent Citations (2)
| Title |
|---|
| PHILIPS RES. REPTS#V25=1970 * |
| PHILIPS RES. REPTS#V26=1971 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US3899372A (en) | 1975-08-12 |
| FR2250199A1 (en:Method) | 1975-05-30 |
| IT1022974B (it) | 1978-04-20 |
| DE2445879C2 (de) | 1982-06-09 |
| JPS5075771A (en:Method) | 1975-06-21 |
| FR2250199B1 (en:Method) | 1978-12-29 |
| JPS5745059B2 (en:Method) | 1982-09-25 |
| DE2445879A1 (de) | 1975-05-07 |
| GB1481196A (en) | 1977-07-27 |
| JPS5635427A (en) | 1981-04-08 |