JPS5651579A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5651579A JPS5651579A JP12531779A JP12531779A JPS5651579A JP S5651579 A JPS5651579 A JP S5651579A JP 12531779 A JP12531779 A JP 12531779A JP 12531779 A JP12531779 A JP 12531779A JP S5651579 A JPS5651579 A JP S5651579A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon
- oxidation
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- 238000011282 treatment Methods 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 229910001385 heavy metal Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12531779A JPS5651579A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12531779A JPS5651579A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5651579A true JPS5651579A (en) | 1981-05-09 |
| JPS6217030B2 JPS6217030B2 (enExample) | 1987-04-15 |
Family
ID=14907107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12531779A Granted JPS5651579A (en) | 1979-10-01 | 1979-10-01 | Plasma etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5651579A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281748A (ja) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | 半導体装置の製造方法 |
-
1979
- 1979-10-01 JP JP12531779A patent/JPS5651579A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01281748A (ja) * | 1988-05-07 | 1989-11-13 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6217030B2 (enExample) | 1987-04-15 |
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