JPS5649516A - Semiconductor wafer - Google Patents
Semiconductor waferInfo
- Publication number
- JPS5649516A JPS5649516A JP12496079A JP12496079A JPS5649516A JP S5649516 A JPS5649516 A JP S5649516A JP 12496079 A JP12496079 A JP 12496079A JP 12496079 A JP12496079 A JP 12496079A JP S5649516 A JPS5649516 A JP S5649516A
- Authority
- JP
- Japan
- Prior art keywords
- targets
- region
- wafer
- semiconductor wafer
- surrounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To elevate the positioning accuracy of a semiconductor wafer by a method wherein at least at two places on the surface of a semiconductor substrate providing with a metal wiring and a scribing region, etc., targets consisting of an uneven region being made of a dielectric layer and a plane region being surrounded with the uneven region are provided. CONSTITUTION:A semiconductor wafer 2 is put on a table 1, a laser beam generating from a laser source is projected to it through reflecting mirrors 5, 5', the reflected laser beam is condensed by a lens 6 and is applied to a receiving part to probe the wafer 2. In this constitution, to make the position of a metal wiring, etc., being provided on the wafer 1 to be definite, targets are formed on the wafer 1 fixing the position. At this time, targets are made as follows. At least two targets 14 are formed on the surface 10' of an Si substrate 10. The targets 14 are consisted of a striped thin layer of SiO2 15 having several-ten and several mum breadth strips being formed by selective plating consisting of a resin 17 and an exposed region 16 being surrounded with the region 17 to enlarge the contrast of strength of the reflected beam.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12496079A JPS5649516A (en) | 1979-09-28 | 1979-09-28 | Semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12496079A JPS5649516A (en) | 1979-09-28 | 1979-09-28 | Semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5649516A true JPS5649516A (en) | 1981-05-06 |
Family
ID=14898473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12496079A Pending JPS5649516A (en) | 1979-09-28 | 1979-09-28 | Semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5649516A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528372A (en) * | 1990-03-12 | 1996-06-18 | Fujitsu Limited | Alignment mark, laser trimmer and semiconductor device manufacturing process |
-
1979
- 1979-09-28 JP JP12496079A patent/JPS5649516A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528372A (en) * | 1990-03-12 | 1996-06-18 | Fujitsu Limited | Alignment mark, laser trimmer and semiconductor device manufacturing process |
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