JPS5646587A - Change-over type semiconductor laser drive circuit - Google Patents

Change-over type semiconductor laser drive circuit

Info

Publication number
JPS5646587A
JPS5646587A JP12088979A JP12088979A JPS5646587A JP S5646587 A JPS5646587 A JP S5646587A JP 12088979 A JP12088979 A JP 12088979A JP 12088979 A JP12088979 A JP 12088979A JP S5646587 A JPS5646587 A JP S5646587A
Authority
JP
Japan
Prior art keywords
circuit
drive circuit
constant current
semiconductor laser
laser drive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12088979A
Other languages
Japanese (ja)
Inventor
Mamoru Yosogi
Koichi Fujisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12088979A priority Critical patent/JPS5646587A/en
Publication of JPS5646587A publication Critical patent/JPS5646587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To simplify a laser switching circuit by forming a communication semiconductor laser drive circuit of a plurality of semiconductor lasers, connecting switching transistors to the respective lasers and controlling them with a DC constant current bias circuit and a pulse constant current source which are common thereto. CONSTITUTION:A plurality of semiconductor lasers 6-1, 7-1, 8-1 are formed at a semiconductor laser drive circuit, a zero potential is applied to the anodes, and the collectors of the transistors 6-2, 7-2, 8-2 are connected to the cathodes. The one ends of the emitters of these transistors are connected simultaneously to the other end of a common pulse constant current circuit 9 applied with -VB potential thereto, and a DC constant current bias circuit 10 is connected in parallel with the circuit 9. When thus constructed and only the laser 6-1 is operated, a current is flowed through the base terminal 6-3 of the transistor 6-2, simultaneously the circuits 9, 10 are operated respectively by the pulse signal source 5 and a DC bias current control signal 11, only the transistor 6-2 is conducted, and the laser 6-1 is driven.
JP12088979A 1979-09-21 1979-09-21 Change-over type semiconductor laser drive circuit Pending JPS5646587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12088979A JPS5646587A (en) 1979-09-21 1979-09-21 Change-over type semiconductor laser drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12088979A JPS5646587A (en) 1979-09-21 1979-09-21 Change-over type semiconductor laser drive circuit

Publications (1)

Publication Number Publication Date
JPS5646587A true JPS5646587A (en) 1981-04-27

Family

ID=14797478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12088979A Pending JPS5646587A (en) 1979-09-21 1979-09-21 Change-over type semiconductor laser drive circuit

Country Status (1)

Country Link
JP (1) JPS5646587A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252587A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Double planar stripe type semiconductor laser device
JPS544581A (en) * 1977-06-14 1979-01-13 Agency Of Ind Science & Technol Stabilizing control system of light output levels and light output waveforms of semiconductor laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252587A (en) * 1975-10-27 1977-04-27 Nippon Telegr & Teleph Corp <Ntt> Double planar stripe type semiconductor laser device
JPS544581A (en) * 1977-06-14 1979-01-13 Agency Of Ind Science & Technol Stabilizing control system of light output levels and light output waveforms of semiconductor laser

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