JPS5646524A - Gaseous phase growing of compound semiconductor - Google Patents

Gaseous phase growing of compound semiconductor

Info

Publication number
JPS5646524A
JPS5646524A JP12304579A JP12304579A JPS5646524A JP S5646524 A JPS5646524 A JP S5646524A JP 12304579 A JP12304579 A JP 12304579A JP 12304579 A JP12304579 A JP 12304579A JP S5646524 A JPS5646524 A JP S5646524A
Authority
JP
Japan
Prior art keywords
substrate
compound semiconductor
gaseous phase
source
gaseous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12304579A
Other languages
Japanese (ja)
Inventor
Yoji Kato
Masashi Dosen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12304579A priority Critical patent/JPS5646524A/en
Publication of JPS5646524A publication Critical patent/JPS5646524A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To increase the growing speed of a compound semiconductor containing As by sending As chloride into a reacting tube, and sending the other As separately into the gaseous phase growing atmosphere. CONSTITUTION:In a reacting tube 1, are arranged a Ga source 2 for the constituent material of a compound semiconductor to be formed by the gaseous material of a compound semiconductor to be formed by the gaseous-phase growth, and a substrate 3 to be grown in a gaseous phase, e.g., a GaAs substrate. The Ga source 2 is positioned at a high temperature portion and the substrate 3 is positioned at a low temperature portion. Then, AsCl3 is carried to the vicinity of the Ga source 2 by a carrier gas H2. At the same time, AsH3 is sent into a gaseous phase growing atmosphere for the substrate 3. A supply hole 4 for supplying said AsH3 into a reacting tube 1 is located in the vicinity of the substrate 3, and the portion A which is on the side to the Ga source 2 is recommendable. In this method, a GaAs compound semiconductor layer is deposited and grown on the substrate 3 at a quick growing speed.
JP12304579A 1979-09-25 1979-09-25 Gaseous phase growing of compound semiconductor Pending JPS5646524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12304579A JPS5646524A (en) 1979-09-25 1979-09-25 Gaseous phase growing of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12304579A JPS5646524A (en) 1979-09-25 1979-09-25 Gaseous phase growing of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5646524A true JPS5646524A (en) 1981-04-27

Family

ID=14850837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12304579A Pending JPS5646524A (en) 1979-09-25 1979-09-25 Gaseous phase growing of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5646524A (en)

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