JPS5645896A - Manufacture of silicon carbide crystal - Google Patents
Manufacture of silicon carbide crystalInfo
- Publication number
- JPS5645896A JPS5645896A JP12127879A JP12127879A JPS5645896A JP S5645896 A JPS5645896 A JP S5645896A JP 12127879 A JP12127879 A JP 12127879A JP 12127879 A JP12127879 A JP 12127879A JP S5645896 A JPS5645896 A JP S5645896A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- stand
- layer
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- 239000010410 layer Substances 0.000 abstract 6
- 239000007789 gas Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- 239000007858 starting material Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 abstract 1
- 239000012159 carrier gas Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12127879A JPS5645896A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12127879A JPS5645896A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645896A true JPS5645896A (en) | 1981-04-25 |
| JPS6121196B2 JPS6121196B2 (enrdf_load_stackoverflow) | 1986-05-26 |
Family
ID=14807288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12127879A Granted JPS5645896A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645896A (enrdf_load_stackoverflow) |
-
1979
- 1979-09-19 JP JP12127879A patent/JPS5645896A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6121196B2 (enrdf_load_stackoverflow) | 1986-05-26 |
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