JPS5643665B2 - - Google Patents
Info
- Publication number
- JPS5643665B2 JPS5643665B2 JP2936777A JP2936777A JPS5643665B2 JP S5643665 B2 JPS5643665 B2 JP S5643665B2 JP 2936777 A JP2936777 A JP 2936777A JP 2936777 A JP2936777 A JP 2936777A JP S5643665 B2 JPS5643665 B2 JP S5643665B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/669,403 US4087834A (en) | 1976-03-22 | 1976-03-22 | Self-protecting semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52126181A JPS52126181A (en) | 1977-10-22 |
| JPS5643665B2 true JPS5643665B2 (ja) | 1981-10-14 |
Family
ID=24686213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2936777A Granted JPS52126181A (en) | 1976-03-22 | 1977-03-18 | Switching semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4087834A (ja) |
| JP (1) | JPS52126181A (ja) |
| DE (1) | DE2712114C2 (ja) |
| FR (1) | FR2356279A1 (ja) |
| GB (1) | GB1579938A (ja) |
| SE (1) | SE427884B (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4812892A (en) * | 1978-03-30 | 1989-03-14 | Siemens Aktiengesellschaft | Light controllable thyristors |
| DE2945347A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb |
| DE2945366A1 (de) * | 1979-11-09 | 1981-05-14 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit steuerbaren emitter-kurzschluessen |
| DE2945380A1 (de) * | 1979-11-09 | 1981-05-21 | Siemens AG, 1000 Berlin und 8000 München | Triac mit einem mehrschichten-halbleiterkoerper |
| US4261000A (en) * | 1980-05-23 | 1981-04-07 | General Electric Company | High voltage semiconductor device having an improved dv/dt capability |
| IE54111B1 (en) * | 1982-03-11 | 1989-06-21 | Westinghouse Electric Corp | Laser treatment of thyristor to provide overvoltage self-protection |
| JPS594075A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | サイリスタ |
| US4555845A (en) * | 1982-10-13 | 1985-12-03 | Westinghouse Electric Corp. | Temperature stable self-protected thyristor and method of producing |
| DE3240564A1 (de) * | 1982-11-03 | 1984-05-03 | Licentia Patent-Verwaltungs-Gmbh | Steuerbares halbleiterschaltelement |
| GB2135515A (en) * | 1983-02-18 | 1984-08-30 | Westinghouse Electric Corp | Thyristor self-protected by remote punch through |
| US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
| US4516315A (en) * | 1983-05-09 | 1985-05-14 | Westinghouse Electric Corp. | Method of making a self-protected thyristor |
| EP0129702B1 (en) * | 1983-05-26 | 1987-08-05 | General Electric Company | Voltage breakover protected thyristor having field-containing layer in avalanche voltage breakover zone |
| CA1272811A (en) * | 1985-04-24 | 1990-08-14 | Hitachi, Ltd. | Semiconductor device of overvoltage self-protection type |
| EP0320738A3 (de) * | 1987-12-17 | 1991-02-06 | Siemens Aktiengesellschaft | Überkopfzündfester Thyristor |
| DE102014009063B4 (de) | 2014-06-18 | 2020-04-09 | U.M. Gewerbeimmobilien Gmbh & Co. Kg | Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen |
| DE102014009046A1 (de) | 2014-06-18 | 2015-12-24 | Voswinkel Entwicklungs- Und Verwaltungs-Gmbh & Co. Kg | Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen |
| DE102014009044B4 (de) | 2014-06-18 | 2020-04-09 | U.M. Gewerbeimmobilien Gmbh & Co. Kg | Kupplungsteil für eine Schnellkupplung für Hochdruckhydraulikleitungen |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1112301A (en) * | 1964-07-27 | 1968-05-01 | Gen Electric | Controlled rectifier with improved turn-on and turn-off characteristics |
| DE1564255A1 (de) * | 1966-04-09 | 1969-09-25 | Licentia Gmbh | Halbleiterbauelement |
| GB1107899A (en) * | 1966-04-15 | 1968-03-27 | Westinghouse Brake & Signal | Semiconductor controllable rectifier devices |
| US3440501A (en) * | 1967-02-02 | 1969-04-22 | Gen Electric | Double-triggering semiconductor controlled rectifier |
| DE1614576A1 (de) * | 1967-08-05 | 1970-10-29 | Siemens Ag | Photothyristor und Verfahren zu seiner Herstellung |
| US3486088A (en) * | 1968-05-22 | 1969-12-23 | Nat Electronics Inc | Regenerative gate thyristor construction |
| US3622845A (en) * | 1969-05-01 | 1971-11-23 | Gen Electric | Scr with amplified emitter gate |
| BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
| JPS508315B1 (ja) * | 1970-02-20 | 1975-04-03 | ||
| USRE27440E (en) | 1970-10-27 | 1972-07-18 | Semiconductor rectifier with improved turn-on and turn-off characteristics | |
| DE2141627C3 (de) * | 1971-08-19 | 1979-06-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US3922774A (en) * | 1972-05-01 | 1975-12-02 | Communications Satellite Corp | Tantalum pentoxide anti-reflective coating |
| US3872493A (en) * | 1972-08-25 | 1975-03-18 | Westinghouse Electric Corp | Selective irradiation of junctioned semiconductor devices |
| US3893153A (en) * | 1974-01-10 | 1975-07-01 | Westinghouse Electric Corp | Light activated thyristor with high di/dt capability |
| CH567803A5 (ja) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
| DE2407696C3 (de) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
-
1976
- 1976-03-22 US US05/669,403 patent/US4087834A/en not_active Expired - Lifetime
-
1977
- 1977-03-18 JP JP2936777A patent/JPS52126181A/ja active Granted
- 1977-03-19 DE DE2712114A patent/DE2712114C2/de not_active Expired
- 1977-03-21 FR FR7708373A patent/FR2356279A1/fr active Granted
- 1977-03-21 GB GB11791/77A patent/GB1579938A/en not_active Expired
- 1977-03-21 SE SE7703219A patent/SE427884B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2356279A1 (fr) | 1978-01-20 |
| GB1579938A (en) | 1980-11-26 |
| SE427884B (sv) | 1983-05-09 |
| FR2356279B1 (ja) | 1983-07-01 |
| JPS52126181A (en) | 1977-10-22 |
| DE2712114C2 (de) | 1985-05-15 |
| US4087834A (en) | 1978-05-02 |
| DE2712114A1 (de) | 1977-10-06 |
| SE7703219L (sv) | 1977-09-23 |