JPS5643622B2 - - Google Patents
Info
- Publication number
- JPS5643622B2 JPS5643622B2 JP7290277A JP7290277A JPS5643622B2 JP S5643622 B2 JPS5643622 B2 JP S5643622B2 JP 7290277 A JP7290277 A JP 7290277A JP 7290277 A JP7290277 A JP 7290277A JP S5643622 B2 JPS5643622 B2 JP S5643622B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/697,984 US4060821A (en) | 1976-06-21 | 1976-06-21 | Field controlled thyristor with buried grid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS538578A JPS538578A (en) | 1978-01-26 |
| JPS5643622B2 true JPS5643622B2 (US06294698-20010925-C00026.png) | 1981-10-14 |
Family
ID=24803423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7290277A Granted JPS538578A (en) | 1976-06-21 | 1977-06-21 | Field controlled thyristor |
Country Status (7)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313060Y2 (US06294698-20010925-C00026.png) * | 1981-12-04 | 1988-04-14 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS542077A (en) * | 1977-06-08 | 1979-01-09 | Hitachi Ltd | Semiconductor switching element |
| JPS5428579A (en) * | 1977-08-05 | 1979-03-03 | Hitachi Ltd | Field effect switching element |
| JPS54112157A (en) | 1978-02-23 | 1979-09-01 | Hitachi Ltd | Control circuit for field effect thyristor |
| JPS6036708B2 (ja) * | 1978-02-24 | 1985-08-22 | 株式会社日立製作所 | 電界効果形サイリスタのゲ−ト回路 |
| JPS5936832B2 (ja) * | 1978-03-14 | 1984-09-06 | 株式会社日立製作所 | 半導体スイッチング素子 |
| US4514747A (en) * | 1978-08-07 | 1985-04-30 | Hitachi, Ltd. | Field controlled thyristor with double-diffused source region |
| JPS6046551B2 (ja) * | 1978-08-07 | 1985-10-16 | 株式会社日立製作所 | 半導体スイツチング素子およびその製法 |
| US4602268A (en) * | 1978-12-20 | 1986-07-22 | At&T Bell Laboratories | High voltage dielectrically isolated dual gate solid-state switch |
| DE2953413A1 (de) * | 1978-12-20 | 1980-12-04 | Western Electric Co | Control circuitry for gated diode switches |
| US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
| HU181029B (en) * | 1978-12-20 | 1983-05-30 | Western Electric Co | Switching circuit containing controlled dioda switch |
| HU180115B (en) * | 1978-12-20 | 1983-02-28 | Western Electric Co | Circuit arrangement for controlling switches with controlled diodes |
| DE2953387A1 (de) * | 1978-12-20 | 1980-12-11 | Western Electric Co | High voltage dielectrically isolated solid-state switch |
| US4586073A (en) * | 1978-12-20 | 1986-04-29 | At&T Bell Laboratories | High voltage junction solid-state switch |
| US4587545A (en) * | 1978-12-20 | 1986-05-06 | At&T Bell Laboratories | High voltage dielectrically isolated remote gate solid-state switch |
| EP0029932B1 (en) * | 1979-11-16 | 1984-08-15 | General Electric Company | Asymmetrical field controlled thyristor |
| US4250409A (en) * | 1979-12-28 | 1981-02-10 | Bell Telephone Laboratories, Incorporated | Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches |
| US4656366A (en) * | 1979-12-28 | 1987-04-07 | American Telephone And Telegraph Company At&T Bell Laboratories | Control circuitry using two branch circuits for high voltage solid-state switches |
| US4587656A (en) * | 1979-12-28 | 1986-05-06 | At&T Bell Laboratories | High voltage solid-state switch |
| JPS5788771A (en) * | 1980-11-21 | 1982-06-02 | Semiconductor Res Found | Electrostatic induction thyristor |
| WO1982003497A1 (en) * | 1981-03-27 | 1982-10-14 | Western Electric Co | Gated diode switch |
| US4466173A (en) * | 1981-11-23 | 1984-08-21 | General Electric Company | Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques |
| US4835586A (en) * | 1987-09-21 | 1989-05-30 | Siliconix Incorporated | Dual-gate high density fet |
| GB2230136B (en) * | 1989-03-28 | 1993-02-10 | Matsushita Electric Works Ltd | Method for manufacturing static induction type semiconductor device and semiconductor devices manufactured thereby |
| US6011279A (en) * | 1997-04-30 | 2000-01-04 | Cree Research, Inc. | Silicon carbide field controlled bipolar switch |
| SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1361920A (fr) * | 1963-02-19 | 1964-05-29 | Perfectionnements aux dispositifs semiconducteurs dits tecnetrons de puissance | |
| US3439192A (en) * | 1964-05-27 | 1969-04-15 | Jeumont Schneider | Control circuits for field-effect bipolar switching devices |
| US3363153A (en) * | 1965-06-01 | 1968-01-09 | Gen Telephone & Elect | Solid state triode having gate electrode therein subtending a portion of the source electrode |
| CH436492A (de) * | 1965-10-21 | 1967-05-31 | Bbc Brown Boveri & Cie | Steuerbare Halbleitervorrichtung mit mehreren Schichten |
| US3398337A (en) * | 1966-04-25 | 1968-08-20 | John J. So | Short-channel field-effect transistor having an impurity gradient in the channel incrasing from a midpoint to each end |
| FR1497548A (fr) * | 1966-07-22 | 1967-10-13 | Jeumont Schneider | Dispositif semi-conducteur bistable pour courants forts |
| US3497777A (en) * | 1967-06-13 | 1970-02-24 | Stanislas Teszner | Multichannel field-effect semi-conductor device |
| US3841917A (en) * | 1971-09-06 | 1974-10-15 | Philips Nv | Methods of manufacturing semiconductor devices |
| DE2233786C3 (de) * | 1972-01-24 | 1982-03-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor mit erhöhter Ein- und Durchschaltgeschwindigkeit |
| FR2174774B1 (US06294698-20010925-C00026.png) * | 1972-03-10 | 1977-01-14 | Teszner Stanislas | |
| FR2299727A1 (fr) * | 1975-01-28 | 1976-08-27 | Alsthom Cgee | Thyristor a caracteristiques de commutation ameliorees |
-
1976
- 1976-06-21 US US05/697,984 patent/US4060821A/en not_active Expired - Lifetime
-
1977
- 1977-06-02 NL NL7706095A patent/NL7706095A/xx not_active Application Discontinuation
- 1977-06-13 GB GB24554/77A patent/GB1568586A/en not_active Expired
- 1977-06-16 FR FR7718466A patent/FR2356278A1/fr active Granted
- 1977-06-18 DE DE2727405A patent/DE2727405C2/de not_active Expired
- 1977-06-21 SE SE7707188A patent/SE428406B/xx not_active IP Right Cessation
- 1977-06-21 JP JP7290277A patent/JPS538578A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6313060Y2 (US06294698-20010925-C00026.png) * | 1981-12-04 | 1988-04-14 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2727405C2 (de) | 1982-09-02 |
| DE2727405A1 (de) | 1977-12-29 |
| US4060821A (en) | 1977-11-29 |
| JPS538578A (en) | 1978-01-26 |
| SE428406B (sv) | 1983-06-27 |
| FR2356278A1 (fr) | 1978-01-20 |
| GB1568586A (en) | 1980-06-04 |
| FR2356278B1 (US06294698-20010925-C00026.png) | 1983-05-27 |
| SE7707188L (sv) | 1977-12-22 |
| NL7706095A (nl) | 1977-12-23 |
