JPS5638474A - Etching method of aluminum or aluminum-base alloy film - Google Patents

Etching method of aluminum or aluminum-base alloy film

Info

Publication number
JPS5638474A
JPS5638474A JP11175079A JP11175079A JPS5638474A JP S5638474 A JPS5638474 A JP S5638474A JP 11175079 A JP11175079 A JP 11175079A JP 11175079 A JP11175079 A JP 11175079A JP S5638474 A JPS5638474 A JP S5638474A
Authority
JP
Japan
Prior art keywords
etching
base alloy
aluminum
gas
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11175079A
Other languages
Japanese (ja)
Other versions
JPS577229B2 (en
Inventor
Masatoshi Oda
Kazuo Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11175079A priority Critical patent/JPS5638474A/en
Publication of JPS5638474A publication Critical patent/JPS5638474A/en
Publication of JPS577229B2 publication Critical patent/JPS577229B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make it possible to carry out the etching with high accuracy, by using a compound free from oxygen as an undercoating of an aluminum film in the gas plasma etching containing chlorine.
CONSTITUTION: In etching Al or an Al-base alloy by a reaction gas containing a gas of a compound havig chlorine as a constituent element, an undercoating is formed under a film or Al or an Al-base alloy film by a compound not containing oxygen as a constituent element. For example, said compound free from oxygen is silicon nitride, multicrystalline silicon, monocrystalline silicon or an org. resin. The Al-base alloy film preferably contains one or more of Si, Cu, Mg, Mn or Ti in an amount of 10wt% or less. An etching gas is, for example, CCl4 or PCl3 and an inert gas can be mixed therein. Thereby, when the plasma etching is carried out, side-etching does not take place even if over-etched and there is no etching residue and, therefore, highly accurate etching can be carried out.
COPYRIGHT: (C)1981,JPO&Japio
JP11175079A 1979-09-03 1979-09-03 Etching method of aluminum or aluminum-base alloy film Granted JPS5638474A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11175079A JPS5638474A (en) 1979-09-03 1979-09-03 Etching method of aluminum or aluminum-base alloy film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11175079A JPS5638474A (en) 1979-09-03 1979-09-03 Etching method of aluminum or aluminum-base alloy film

Publications (2)

Publication Number Publication Date
JPS5638474A true JPS5638474A (en) 1981-04-13
JPS577229B2 JPS577229B2 (en) 1982-02-09

Family

ID=14569231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11175079A Granted JPS5638474A (en) 1979-09-03 1979-09-03 Etching method of aluminum or aluminum-base alloy film

Country Status (1)

Country Link
JP (1) JPS5638474A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128528A (en) * 1984-11-27 1986-06-16 Matsushita Electric Ind Co Ltd Dry etching method of aluminum-silicon-copper alloy
JPS6396920A (en) * 1986-10-13 1988-04-27 Sony Corp Dry etching of aluminum alloy
US5245203A (en) * 1988-06-06 1993-09-14 Canon Kabushiki Kaisha Photoelectric converter with plural regions

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4073669A (en) * 1975-09-18 1978-02-14 Itt Industries, Incorporated Plasma etching
DE2744534A1 (en) * 1976-10-05 1978-04-06 Christopher David Dobson Plasma etching aluminium layer on silicon integrated circuits - in vacuum chamber using electrodes which are not attached by plasma gas

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4073669A (en) * 1975-09-18 1978-02-14 Itt Industries, Incorporated Plasma etching
DE2744534A1 (en) * 1976-10-05 1978-04-06 Christopher David Dobson Plasma etching aluminium layer on silicon integrated circuits - in vacuum chamber using electrodes which are not attached by plasma gas

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61128528A (en) * 1984-11-27 1986-06-16 Matsushita Electric Ind Co Ltd Dry etching method of aluminum-silicon-copper alloy
JPS6396920A (en) * 1986-10-13 1988-04-27 Sony Corp Dry etching of aluminum alloy
US5245203A (en) * 1988-06-06 1993-09-14 Canon Kabushiki Kaisha Photoelectric converter with plural regions

Also Published As

Publication number Publication date
JPS577229B2 (en) 1982-02-09

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