JPS5638474A - Etching method of aluminum or aluminum-base alloy film - Google Patents
Etching method of aluminum or aluminum-base alloy filmInfo
- Publication number
- JPS5638474A JPS5638474A JP11175079A JP11175079A JPS5638474A JP S5638474 A JPS5638474 A JP S5638474A JP 11175079 A JP11175079 A JP 11175079A JP 11175079 A JP11175079 A JP 11175079A JP S5638474 A JPS5638474 A JP S5638474A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- base alloy
- aluminum
- gas
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To make it possible to carry out the etching with high accuracy, by using a compound free from oxygen as an undercoating of an aluminum film in the gas plasma etching containing chlorine.
CONSTITUTION: In etching Al or an Al-base alloy by a reaction gas containing a gas of a compound havig chlorine as a constituent element, an undercoating is formed under a film or Al or an Al-base alloy film by a compound not containing oxygen as a constituent element. For example, said compound free from oxygen is silicon nitride, multicrystalline silicon, monocrystalline silicon or an org. resin. The Al-base alloy film preferably contains one or more of Si, Cu, Mg, Mn or Ti in an amount of 10wt% or less. An etching gas is, for example, CCl4 or PCl3 and an inert gas can be mixed therein. Thereby, when the plasma etching is carried out, side-etching does not take place even if over-etched and there is no etching residue and, therefore, highly accurate etching can be carried out.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11175079A JPS5638474A (en) | 1979-09-03 | 1979-09-03 | Etching method of aluminum or aluminum-base alloy film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11175079A JPS5638474A (en) | 1979-09-03 | 1979-09-03 | Etching method of aluminum or aluminum-base alloy film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5638474A true JPS5638474A (en) | 1981-04-13 |
JPS577229B2 JPS577229B2 (en) | 1982-02-09 |
Family
ID=14569231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11175079A Granted JPS5638474A (en) | 1979-09-03 | 1979-09-03 | Etching method of aluminum or aluminum-base alloy film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5638474A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128528A (en) * | 1984-11-27 | 1986-06-16 | Matsushita Electric Ind Co Ltd | Dry etching method of aluminum-silicon-copper alloy |
JPS6396920A (en) * | 1986-10-13 | 1988-04-27 | Sony Corp | Dry etching of aluminum alloy |
US5245203A (en) * | 1988-06-06 | 1993-09-14 | Canon Kabushiki Kaisha | Photoelectric converter with plural regions |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4073669A (en) * | 1975-09-18 | 1978-02-14 | Itt Industries, Incorporated | Plasma etching |
DE2744534A1 (en) * | 1976-10-05 | 1978-04-06 | Christopher David Dobson | Plasma etching aluminium layer on silicon integrated circuits - in vacuum chamber using electrodes which are not attached by plasma gas |
-
1979
- 1979-09-03 JP JP11175079A patent/JPS5638474A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4073669A (en) * | 1975-09-18 | 1978-02-14 | Itt Industries, Incorporated | Plasma etching |
DE2744534A1 (en) * | 1976-10-05 | 1978-04-06 | Christopher David Dobson | Plasma etching aluminium layer on silicon integrated circuits - in vacuum chamber using electrodes which are not attached by plasma gas |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61128528A (en) * | 1984-11-27 | 1986-06-16 | Matsushita Electric Ind Co Ltd | Dry etching method of aluminum-silicon-copper alloy |
JPS6396920A (en) * | 1986-10-13 | 1988-04-27 | Sony Corp | Dry etching of aluminum alloy |
US5245203A (en) * | 1988-06-06 | 1993-09-14 | Canon Kabushiki Kaisha | Photoelectric converter with plural regions |
Also Published As
Publication number | Publication date |
---|---|
JPS577229B2 (en) | 1982-02-09 |
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