JPS5635305B2 - - Google Patents

Info

Publication number
JPS5635305B2
JPS5635305B2 JP15476975A JP15476975A JPS5635305B2 JP S5635305 B2 JPS5635305 B2 JP S5635305B2 JP 15476975 A JP15476975 A JP 15476975A JP 15476975 A JP15476975 A JP 15476975A JP S5635305 B2 JPS5635305 B2 JP S5635305B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15476975A
Other languages
Japanese (ja)
Other versions
JPS5279679A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP50154769A priority Critical patent/JPS5279679A/ja
Priority to US05/754,693 priority patent/US4115795A/en
Publication of JPS5279679A publication Critical patent/JPS5279679A/ja
Publication of JPS5635305B2 publication Critical patent/JPS5635305B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP50154769A 1975-12-26 1975-12-26 Semiconductor memory device Granted JPS5279679A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50154769A JPS5279679A (en) 1975-12-26 1975-12-26 Semiconductor memory device
US05/754,693 US4115795A (en) 1975-12-26 1976-12-27 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50154769A JPS5279679A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP14569580A Division JPS5660051A (en) 1980-10-20 1980-10-20 Semiconductor memory device
JP14569780A Division JPS5660053A (en) 1980-10-20 1980-10-20 Manufacture of semiconductor memory device
JP14569680A Division JPS5660052A (en) 1980-10-20 1980-10-20 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5279679A JPS5279679A (en) 1977-07-04
JPS5635305B2 true JPS5635305B2 (show.php) 1981-08-15

Family

ID=15591479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50154769A Granted JPS5279679A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Country Status (2)

Country Link
US (1) US4115795A (show.php)
JP (1) JPS5279679A (show.php)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225945A (en) * 1976-01-12 1980-09-30 Texas Instruments Incorporated Random access MOS memory cell using double level polysilicon
DE2720533A1 (de) * 1977-05-06 1978-11-09 Siemens Ag Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
US4282540A (en) * 1977-12-23 1981-08-04 International Business Machines Corporation FET Containing stacked gates
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
DE2844878A1 (de) * 1978-10-14 1980-04-30 Itt Ind Gmbh Deutsche Integrierbarer isolierschicht-feldeffekttransistor
US4492973A (en) * 1978-12-25 1985-01-08 Tokyo Shibaura Denki Kabushiki Kaisha MOS Dynamic memory cells and method of fabricating the same
JPS5856268B2 (ja) * 1978-12-26 1983-12-14 超エル・エス・アイ技術研究組合 半導体装置の製造方法
JPS55153368A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Semiconductor memory device
US4297719A (en) * 1979-08-10 1981-10-27 Rca Corporation Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
US4381595A (en) * 1979-10-09 1983-05-03 Mitsubishi Denki Kabushiki Kaisha Process for preparing multilayer interconnection
DE3173413D1 (en) * 1980-01-25 1986-02-20 Toshiba Kk Semiconductor memory device
US4373250A (en) * 1980-11-17 1983-02-15 Signetics Corporation Process for fabricating a high capacity memory cell
JPS5846178B2 (ja) * 1980-12-03 1983-10-14 富士通株式会社 半導体装置
JPS57113264A (en) * 1980-12-29 1982-07-14 Fujitsu Ltd Manufacture of mis type capacitor
JPS58213450A (ja) * 1982-06-04 1983-12-12 Toshiba Corp 半導体装置の多層配線構造
US4419812A (en) * 1982-08-23 1983-12-13 Ncr Corporation Method of fabricating an integrated circuit voltage multiplier containing a parallel plate capacitor
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
EP0463741B1 (en) * 1990-05-31 1997-07-23 Canon Kabushiki Kaisha Method of manufacturing a semiconductor memory device containing a capacitor
US7151036B1 (en) * 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
DE2532594B2 (de) * 1975-07-21 1980-05-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterspeicher

Also Published As

Publication number Publication date
US4115795A (en) 1978-09-19
JPS5279679A (en) 1977-07-04

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