JPS5634192A - Memory unit - Google Patents
Memory unitInfo
- Publication number
- JPS5634192A JPS5634192A JP11091779A JP11091779A JPS5634192A JP S5634192 A JPS5634192 A JP S5634192A JP 11091779 A JP11091779 A JP 11091779A JP 11091779 A JP11091779 A JP 11091779A JP S5634192 A JPS5634192 A JP S5634192A
- Authority
- JP
- Japan
- Prior art keywords
- sense
- lines
- column
- line
- mosfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/126—Virtual ground arrays
Landscapes
- Read Only Memory (AREA)
Abstract
PURPOSE:To realize high speed and high density of ROM, by preventing accumulation of parasitic capacitances of a plurality of sense lines, through the connection of the sense line only selected with the switch controlled with the column line, to the sense common bus. CONSTITUTION:The gate electrode of memory element M4111,... of MOSFET is connected to the row lines r41,..., and the source and drain are respectively connected to the column lines C41,... and sense line S41,... when the address information is at ''1'', and no connection is made at the information ''0''. Further, C41 only is selected to low level at the column address circuit 4 and r41 only is selected to high level at the row address circuit 2, then, MOSFET-M4111 and M4112 are slected and the sence common buses SB41, SB42 are made to low level through the switch FETQ41, Q42 controlled with the sense lines S41, S42 and the column line C41.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54110917A JPS5831676B2 (en) | 1979-08-29 | 1979-08-29 | Storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP54110917A JPS5831676B2 (en) | 1979-08-29 | 1979-08-29 | Storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5634192A true JPS5634192A (en) | 1981-04-06 |
JPS5831676B2 JPS5831676B2 (en) | 1983-07-07 |
Family
ID=14547900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP54110917A Expired JPS5831676B2 (en) | 1979-08-29 | 1979-08-29 | Storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5831676B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5940397A (en) * | 1982-08-31 | 1984-03-06 | Toshiba Corp | Data reading circuit |
JPS61222096A (en) * | 1984-12-26 | 1986-10-02 | トムソン コンポーネンツ‐モステック コーポレーション | Cmos rom data selection circuit |
-
1979
- 1979-08-29 JP JP54110917A patent/JPS5831676B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5940397A (en) * | 1982-08-31 | 1984-03-06 | Toshiba Corp | Data reading circuit |
JPH0344400B2 (en) * | 1982-08-31 | 1991-07-05 | Tokyo Shibaura Electric Co | |
JPS61222096A (en) * | 1984-12-26 | 1986-10-02 | トムソン コンポーネンツ‐モステック コーポレーション | Cmos rom data selection circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS5831676B2 (en) | 1983-07-07 |
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