JPS5771571A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5771571A
JPS5771571A JP14651180A JP14651180A JPS5771571A JP S5771571 A JPS5771571 A JP S5771571A JP 14651180 A JP14651180 A JP 14651180A JP 14651180 A JP14651180 A JP 14651180A JP S5771571 A JPS5771571 A JP S5771571A
Authority
JP
Japan
Prior art keywords
storage device
small
arrayed
integration
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14651180A
Other languages
Japanese (ja)
Other versions
JPS645398B2 (en
Inventor
Hiroshi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP14651180A priority Critical patent/JPS5771571A/en
Publication of JPS5771571A publication Critical patent/JPS5771571A/en
Publication of JPS645398B2 publication Critical patent/JPS645398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To make a selecting circuit small-sized, and to elevate the integration of a storage device, by connecting in common >=2 groups column lines of MOSFET storage elements have been arrayed in matrix, and selecting an MOSFET which has been selected simultaneously in accordance with the source potential. CONSTITUTION:MOSFETs 29, 28, etc. forming storage elements which have been arrayed in matrix are connected to a column decoder by a common column line 21, etc. and are selected simultaneously. On the other hand, the respective sources of the FETs 29, 28 are connected to source lines 24, 25 which are set in advance to a high level by an enable signal, etc., and are grounded and become low level through an FET30 or 31, in accordance with selection, and one of the FET29 or 28 is selected. According to this constitution, the column decoder becomes small- sized, and since the selecting circuit is made small, the semiconductor storage device is also small, and the integration is elevated.
JP14651180A 1980-10-20 1980-10-20 Semiconductor storage device Granted JPS5771571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14651180A JPS5771571A (en) 1980-10-20 1980-10-20 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14651180A JPS5771571A (en) 1980-10-20 1980-10-20 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5771571A true JPS5771571A (en) 1982-05-04
JPS645398B2 JPS645398B2 (en) 1989-01-30

Family

ID=15409283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14651180A Granted JPS5771571A (en) 1980-10-20 1980-10-20 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5771571A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119992A (en) * 1987-10-31 1989-05-12 Nec Corp Insulated gate type nonvolatile semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01119992A (en) * 1987-10-31 1989-05-12 Nec Corp Insulated gate type nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JPS645398B2 (en) 1989-01-30

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