JPS5633819A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5633819A JPS5633819A JP10990479A JP10990479A JPS5633819A JP S5633819 A JPS5633819 A JP S5633819A JP 10990479 A JP10990479 A JP 10990479A JP 10990479 A JP10990479 A JP 10990479A JP S5633819 A JPS5633819 A JP S5633819A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- layer
- treating
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000001546 nitrifying effect Effects 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
PURPOSE:To improve a silicon dioxide insulating film in its breakdown resistance at the time of ion irradiation by heat-treating a silicon dioxide layer formed on the surface of a semiconductor substrate in an atmosphere including nitrogen atoms, nitrifying a part of the layer and then implanting ions. CONSTITUTION:An SiO2 film 2 is formed on the surface of a semiconductor substrate 1 of Si, etc., and by heat-treating them in an atmosphere including NH3 at 1,000 deg.C, a part of the SiO2 film is converted into a nitride layer 3. Using the so formed surface insulating layer as a gate insulating film, an MOSFET is formed by ion implantation. At this time, an Si gate electrode is prepared on the gate insulating layer and ions are implanted, but as the gate electrode is in a floating state, charge accumulation occurs and this makes a leak current flow through the gate film. In this case, the gate film surface has been nitrified, so that the leak current value can be increased to a large extent without causing the permanent break down of the film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10990479A JPS5633819A (en) | 1979-08-29 | 1979-08-29 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10990479A JPS5633819A (en) | 1979-08-29 | 1979-08-29 | Preparation of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5633819A true JPS5633819A (en) | 1981-04-04 |
| JPS63941B2 JPS63941B2 (en) | 1988-01-09 |
Family
ID=14522096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10990479A Granted JPS5633819A (en) | 1979-08-29 | 1979-08-29 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5633819A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50147877A (en) * | 1974-05-08 | 1975-11-27 |
-
1979
- 1979-08-29 JP JP10990479A patent/JPS5633819A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50147877A (en) * | 1974-05-08 | 1975-11-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63941B2 (en) | 1988-01-09 |
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