JPS5626148B2 - - Google Patents
Info
- Publication number
- JPS5626148B2 JPS5626148B2 JP14369876A JP14369876A JPS5626148B2 JP S5626148 B2 JPS5626148 B2 JP S5626148B2 JP 14369876 A JP14369876 A JP 14369876A JP 14369876 A JP14369876 A JP 14369876A JP S5626148 B2 JPS5626148 B2 JP S5626148B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/088—J-Fet, i.e. junction field effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Thyristors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14369876A JPS5368178A (en) | 1976-11-30 | 1976-11-30 | Fet transistor |
| US05/855,617 US4115793A (en) | 1976-11-30 | 1977-11-29 | Field effect transistor with reduced series resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14369876A JPS5368178A (en) | 1976-11-30 | 1976-11-30 | Fet transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5368178A JPS5368178A (en) | 1978-06-17 |
| JPS5626148B2 true JPS5626148B2 (US08066781-20111129-C00013.png) | 1981-06-17 |
Family
ID=15344874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14369876A Granted JPS5368178A (en) | 1976-11-30 | 1976-11-30 | Fet transistor |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4115793A (US08066781-20111129-C00013.png) |
| JP (1) | JPS5368178A (US08066781-20111129-C00013.png) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53118982A (en) * | 1977-03-28 | 1978-10-17 | Seiko Instr & Electronics Ltd | Electrostatic induction transistor logic element |
| JPS53121581A (en) * | 1977-03-31 | 1978-10-24 | Seiko Instr & Electronics Ltd | Logical element of electrostatic inductive transistor |
| JPS53127272A (en) * | 1977-04-13 | 1978-11-07 | Semiconductor Res Found | Electrostatic induction transistor |
| US4326210A (en) * | 1977-09-26 | 1982-04-20 | Sharp Kabushiki Kaisha | Light-responsive field effect mode semiconductor devices |
| JPS5919476B2 (ja) * | 1978-05-16 | 1984-05-07 | 工業技術院長 | 半導体集積回路 |
| JPS5519865A (en) * | 1978-07-28 | 1980-02-12 | Mitsubishi Electric Corp | Semiconductor and manufacture thereof |
| JPS5529123A (en) * | 1978-08-23 | 1980-03-01 | Hitachi Ltd | Semiconductor device |
| US4337474A (en) * | 1978-08-31 | 1982-06-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| IT1101311B (it) * | 1978-12-15 | 1985-09-28 | Ates Componenti Elettron | J-fet,canale p,a bassa tensione di pinch-off |
| JPS5593272A (en) * | 1979-01-04 | 1980-07-15 | Semiconductor Res Found | Electrostatic induction type transistor |
| JPS5598870A (en) * | 1979-01-19 | 1980-07-28 | Semiconductor Res Found | Semiconductor device |
| JPS55102275A (en) * | 1979-01-29 | 1980-08-05 | Semiconductor Res Found | Electrostatic induction type semiconductor device |
| JPS55130176A (en) * | 1979-03-30 | 1980-10-08 | Hitachi Ltd | Field effect semiconductor element and method of fabricating the same |
| JPS5558577A (en) * | 1979-04-18 | 1980-05-01 | Semiconductor Res Found | Semiconductor device |
| JPS55153376A (en) * | 1979-05-17 | 1980-11-29 | Semiconductor Res Found | Vertical type unipolar transistor |
| DE2926741C2 (de) * | 1979-07-03 | 1982-09-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekt-Transistor und Verfahren zu seiner Herstellung |
| US4366495A (en) * | 1979-08-06 | 1982-12-28 | Rca Corporation | Vertical MOSFET with reduced turn-on resistance |
| FR2480501A1 (fr) * | 1980-04-14 | 1981-10-16 | Thomson Csf | Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication |
| JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
| US4375124A (en) * | 1981-11-12 | 1983-03-01 | Gte Laboratories Incorporated | Power static induction transistor fabrication |
| US4466173A (en) * | 1981-11-23 | 1984-08-21 | General Electric Company | Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques |
| JPH077844B2 (ja) * | 1981-11-30 | 1995-01-30 | 財団法人半導体研究振興会 | 静電誘導型半導体光電変換装置 |
| JPS5895877A (ja) * | 1981-12-01 | 1983-06-07 | Semiconductor Res Found | 半導体光電変換装置 |
| JPS58106870A (ja) * | 1981-12-18 | 1983-06-25 | Nissan Motor Co Ltd | パワ−ｍｏｓｆｅｔ |
| US4403396A (en) * | 1981-12-24 | 1983-09-13 | Gte Laboratories Incorporated | Semiconductor device design and process |
| US4476622A (en) * | 1981-12-24 | 1984-10-16 | Gte Laboratories Inc. | Recessed gate static induction transistor fabrication |
| JPH06101566B2 (ja) * | 1984-04-25 | 1994-12-12 | 株式会社日立製作所 | 縦型電界効果トランジスタ |
| US4546375A (en) * | 1982-06-24 | 1985-10-08 | Rca Corporation | Vertical IGFET with internal gate and method for making same |
| US4528745A (en) * | 1982-07-13 | 1985-07-16 | Toyo Denki Seizo Kabushiki Kaisha | Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques |
| JPS60152063A (ja) * | 1984-01-20 | 1985-08-10 | Toyo Electric Mfg Co Ltd | 静電誘導サイリスタ |
| US4566172A (en) * | 1984-02-24 | 1986-01-28 | Gte Laboratories Incorporated | Method of fabricating a static induction type recessed junction field effect transistor |
| US4543706A (en) * | 1984-02-24 | 1985-10-01 | Gte Laboratories Incorporated | Fabrication of junction field effect transistor with filled grooves |
| US4651407A (en) * | 1985-05-08 | 1987-03-24 | Gte Laboratories Incorporated | Method of fabricating a junction field effect transistor utilizing epitaxial overgrowth and vertical junction formation |
| JPS62263677A (ja) * | 1986-05-09 | 1987-11-16 | Mitsubishi Electric Corp | 静電誘導型半導体装置及びその製造方法 |
| US4791462A (en) * | 1987-09-10 | 1988-12-13 | Siliconix Incorporated | Dense vertical j-MOS transistor |
| US4903189A (en) * | 1988-04-27 | 1990-02-20 | General Electric Company | Low noise, high frequency synchronous rectifier |
| BE1007283A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen. |
| US5575929A (en) * | 1995-06-05 | 1996-11-19 | The Regents Of The University Of California | Method for making circular tubular channels with two silicon wafers |
| US5910665A (en) * | 1995-12-29 | 1999-06-08 | Texas Instruments Incorporated | Low capacitance power VFET method and device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917182A (US08066781-20111129-C00013.png) * | 1972-05-22 | 1974-02-15 | ||
| JPS4979183A (US08066781-20111129-C00013.png) * | 1972-12-01 | 1974-07-31 | ||
| JPS5027992A (US08066781-20111129-C00013.png) * | 1973-07-17 | 1975-03-22 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
-
1976
- 1976-11-30 JP JP14369876A patent/JPS5368178A/ja active Granted
-
1977
- 1977-11-29 US US05/855,617 patent/US4115793A/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917182A (US08066781-20111129-C00013.png) * | 1972-05-22 | 1974-02-15 | ||
| JPS4979183A (US08066781-20111129-C00013.png) * | 1972-12-01 | 1974-07-31 | ||
| JPS5027992A (US08066781-20111129-C00013.png) * | 1973-07-17 | 1975-03-22 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4115793A (en) | 1978-09-19 |
| JPS5368178A (en) | 1978-06-17 |
