JPS5622286A - Dynamic memory control system - Google Patents

Dynamic memory control system

Info

Publication number
JPS5622286A
JPS5622286A JP9777879A JP9777879A JPS5622286A JP S5622286 A JPS5622286 A JP S5622286A JP 9777879 A JP9777879 A JP 9777879A JP 9777879 A JP9777879 A JP 9777879A JP S5622286 A JPS5622286 A JP S5622286A
Authority
JP
Japan
Prior art keywords
address
refresh
signal
memory cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9777879A
Other languages
Japanese (ja)
Inventor
Takayuki Matsueda
Masahiko Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP9777879A priority Critical patent/JPS5622286A/en
Publication of JPS5622286A publication Critical patent/JPS5622286A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To enable the readout/write-in always stable even with noise, by performing the refresh of memory cell through the forming of address signal exclusively used for the refresh based on the address nonselection signal. CONSTITUTION:Normally, the control circuit repeats the memory access and nonaccess, and at memory access, in synchronizing with the address selection signal of the said memory cell chip, readout/write-in is made. If the control circuit is at nonmemory access and the memory is not selected, a signal is given to the FF-D1 via the NAND gate NA2 and inverter IN2 and output is produced in synchronizing with the clock phi4 to form the address strobe RAS2 with the NAND gate NA3 and inverter IN3, and this becomes the row address strobe RAS2 via the NOR gate NR. In this case, no column address strobe CAS is produced, and the memory cell is in refresh state. Further, repetitive refresh operation is made.
JP9777879A 1979-07-30 1979-07-30 Dynamic memory control system Pending JPS5622286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9777879A JPS5622286A (en) 1979-07-30 1979-07-30 Dynamic memory control system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9777879A JPS5622286A (en) 1979-07-30 1979-07-30 Dynamic memory control system

Publications (1)

Publication Number Publication Date
JPS5622286A true JPS5622286A (en) 1981-03-02

Family

ID=14201281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9777879A Pending JPS5622286A (en) 1979-07-30 1979-07-30 Dynamic memory control system

Country Status (1)

Country Link
JP (1) JPS5622286A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166093A (en) * 1986-12-26 1988-07-09 Toshiba Corp Control circuit for semiconductor memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166093A (en) * 1986-12-26 1988-07-09 Toshiba Corp Control circuit for semiconductor memory
JPH059877B2 (en) * 1986-12-26 1993-02-08 Tokyo Shibaura Electric Co

Similar Documents

Publication Publication Date Title
KR910005308A (en) Semiconductor memory
US5339276A (en) Synchronous dynamic random access memory
US5193072A (en) Hidden refresh of a dynamic random access memory
US4207618A (en) On-chip refresh for dynamic memory
EP0090590A2 (en) Semiconductor memory device
EP0942429A3 (en) Column address generator circuit
KR870010551A (en) Dynamic RAM
MY102152A (en) Semiconductor memory device
DE3781294D1 (en) SEMICONDUCTOR MEMORY ARRANGEMENT.
KR960012013A (en) Synchronous Semiconductor Memory
KR850700177A (en) Memory device
US20040114423A1 (en) 4-bit prefetch-type FCRAM having improved data write control circuit in memory cell array and method of masking data using the 4-bit prefetch-type FCRAM
JPS5668990A (en) Memory circuit
JPS5622286A (en) Dynamic memory control system
JPS5427734A (en) Dynamic semiconductor memory
JPS52102013A (en) Memory unit
US5663912A (en) Semiconductor memory device
KR100311116B1 (en) Test mode control circuit and method for semiconductor memory device
KR850008238A (en) Semiconductor memory
KR960009947B1 (en) Refresh circuit of dram
JPS60157798A (en) Semiconductor memory
JPS53148347A (en) Dynamic memory unit
US6130849A (en) Semiconductor memory device and data bus amplifier activation method for the semiconductor memory device
US6185132B1 (en) Sensing current reduction device for semiconductor memory device and method therefor
KR880002304Y1 (en) Matrix adress selecting circuit of dram