JPS5619637A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5619637A JPS5619637A JP9420079A JP9420079A JPS5619637A JP S5619637 A JPS5619637 A JP S5619637A JP 9420079 A JP9420079 A JP 9420079A JP 9420079 A JP9420079 A JP 9420079A JP S5619637 A JPS5619637 A JP S5619637A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- chromina
- aluminum
- alumina
- polyimide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To enhance the moisture resistance of the semiconductor device and prevent oxidation of aluminum wires undesired by interpposing an alumina, chromina or titania layer to form a multilayer wire using polyimide group resin for an interlayer insulator. CONSTITUTION:The first aluminum layer 3 is formed on SiO2 film 2 on an Si substrate 1 formed with a semiconductor element. After alumina, chromina, or titania layer 4 is evaporated in approx. 0.01-1.0mu thereon, polyimide resin 5 is rotatably coated thereon, and is preliminarily cured in N2. Then it is perforated to each the alumina, chromina or titania layer of the opening, to completely cure the polyimide resin 5, to form the second aluminum wire layer 6 thereon, to then form an insulating layer thereon, perforate it, repeat the formation of aluminum wire layer, and finally age it at approx. 500 deg.C in N2. This configuraion can improve the adhesion of the polyimide layer to improve the water resistance of the water resistance of the device, to harden the polyimide resin, and to age the entire device. Accordingly, the aluminum wire layer may not be disadvantageously oxidized to form safely the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9420079A JPS5619637A (en) | 1979-07-26 | 1979-07-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9420079A JPS5619637A (en) | 1979-07-26 | 1979-07-26 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5619637A true JPS5619637A (en) | 1981-02-24 |
Family
ID=14103647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9420079A Pending JPS5619637A (en) | 1979-07-26 | 1979-07-26 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5619637A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63158074A (en) * | 1986-12-22 | 1988-07-01 | マツダ工業株式会社 | Stand for high jump |
-
1979
- 1979-07-26 JP JP9420079A patent/JPS5619637A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63158074A (en) * | 1986-12-22 | 1988-07-01 | マツダ工業株式会社 | Stand for high jump |
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