JPS5619213A - Band pass type differential amplifying circuit - Google Patents

Band pass type differential amplifying circuit

Info

Publication number
JPS5619213A
JPS5619213A JP9404679A JP9404679A JPS5619213A JP S5619213 A JPS5619213 A JP S5619213A JP 9404679 A JP9404679 A JP 9404679A JP 9404679 A JP9404679 A JP 9404679A JP S5619213 A JPS5619213 A JP S5619213A
Authority
JP
Japan
Prior art keywords
beta
resistance
amplifying circuit
emitters
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9404679A
Other languages
Japanese (ja)
Other versions
JPS6154287B2 (en
Inventor
Botaro Hirosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9404679A priority Critical patent/JPS5619213A/en
Publication of JPS5619213A publication Critical patent/JPS5619213A/en
Publication of JPS6154287B2 publication Critical patent/JPS6154287B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197Pl types
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45098PI types

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To facilitate an easy characteristic control at the high frequency region with a simple constitution, by connecting the resistance between both emitters of a pair of transistors and then connecting the distribution constant lines of the same length and with one end opened each to both emitters. CONSTITUTION:The central frequency of the pass band of the amplifying circuit is set to f0, and the same value is secured between length l of distribution constant lines 6 and 7 and characteristic impedance Z0. And the earth current amplification factor of the transistor is denoted as beta along with the internal base resistance as rb, the internal emitter resistance as re, the driving source impedance of the circuit which drives input terminal 1 as ZS, emitter resistance value as RE and the collector resistance value as RL respectively. And the transmission function ¦H(f)¦ reaching output terminal 2 is shown by equation [I] when voltage V1(f) is applied to the input terminal, and the maximum gain ¦H(f0)¦=¦RL/[Re+(rb+ZS)/beta]¦ is obtained with f=f0 in case beta is sufficient. As a result, the characteristic control can be facilitated at the high frequency region.
JP9404679A 1979-07-24 1979-07-24 Band pass type differential amplifying circuit Granted JPS5619213A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9404679A JPS5619213A (en) 1979-07-24 1979-07-24 Band pass type differential amplifying circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9404679A JPS5619213A (en) 1979-07-24 1979-07-24 Band pass type differential amplifying circuit

Publications (2)

Publication Number Publication Date
JPS5619213A true JPS5619213A (en) 1981-02-23
JPS6154287B2 JPS6154287B2 (en) 1986-11-21

Family

ID=14099613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9404679A Granted JPS5619213A (en) 1979-07-24 1979-07-24 Band pass type differential amplifying circuit

Country Status (1)

Country Link
JP (1) JPS5619213A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178611A (en) * 1982-04-12 1983-10-19 Nippon Telegr & Teleph Corp <Ntt> Tuning amplifier

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007174442A (en) * 2005-12-23 2007-07-05 Toyota Central Res & Dev Lab Inc Differential amplifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178611A (en) * 1982-04-12 1983-10-19 Nippon Telegr & Teleph Corp <Ntt> Tuning amplifier
JPS6261167B2 (en) * 1982-04-12 1987-12-19 Nippon Telegraph & Telephone

Also Published As

Publication number Publication date
JPS6154287B2 (en) 1986-11-21

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