JPS5617046A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5617046A
JPS5617046A JP9150779A JP9150779A JPS5617046A JP S5617046 A JPS5617046 A JP S5617046A JP 9150779 A JP9150779 A JP 9150779A JP 9150779 A JP9150779 A JP 9150779A JP S5617046 A JPS5617046 A JP S5617046A
Authority
JP
Japan
Prior art keywords
pellet
reduced
glass sleeve
semiconductor device
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9150779A
Other languages
Japanese (ja)
Other versions
JPS625342B2 (en
Inventor
Kensuke Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9150779A priority Critical patent/JPS5617046A/en
Publication of JPS5617046A publication Critical patent/JPS5617046A/en
Publication of JPS625342B2 publication Critical patent/JPS625342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To reduce pressurizing force of a semiconductor device and to reduce the deterioration of the device due to local heat by setting the ratio of sectional areas of a semiconductor pellet and a glass sleeve at a predetermined range. CONSTITUTION:When the cross sectional area S0 of a glass sleeve 6 is reduced as compared with the area S of an Si pellet 5, the pressurizing force thereof is reduced, while forward voltage drop is increased. Accordingly, it is selected to be S/S0<= 0.45. On the other hand, when pulsating forward current of narrow width flows, only the pellt 5 is heated, but the glass sleeve 6 is not varied in temperature. Accordingly, excessive compressive force is applied to the pellet 5 and the electrode member 4 resulting in final breakdonw. Since the smaller the cross sectional area is reduced as compared with the area of the pellt, the greater the breackdown value becomes, it is selected to becomes S0S<=0.27. When the S0/S is selected in this range, there can be obtained a semiconductor device having high strength against excessive current of pulsating state with narrow width with stable electric characteristics.
JP9150779A 1979-07-20 1979-07-20 Semiconductor device Granted JPS5617046A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9150779A JPS5617046A (en) 1979-07-20 1979-07-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9150779A JPS5617046A (en) 1979-07-20 1979-07-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5617046A true JPS5617046A (en) 1981-02-18
JPS625342B2 JPS625342B2 (en) 1987-02-04

Family

ID=14028315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9150779A Granted JPS5617046A (en) 1979-07-20 1979-07-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617046A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05236875A (en) * 1991-04-10 1993-09-17 Meiji Milk Prod Co Ltd Production of cheeses of columnar dual structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05236875A (en) * 1991-04-10 1993-09-17 Meiji Milk Prod Co Ltd Production of cheeses of columnar dual structure

Also Published As

Publication number Publication date
JPS625342B2 (en) 1987-02-04

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