JPS56165374A - Light emitting diode - Google Patents

Light emitting diode

Info

Publication number
JPS56165374A
JPS56165374A JP6974980A JP6974980A JPS56165374A JP S56165374 A JPS56165374 A JP S56165374A JP 6974980 A JP6974980 A JP 6974980A JP 6974980 A JP6974980 A JP 6974980A JP S56165374 A JPS56165374 A JP S56165374A
Authority
JP
Japan
Prior art keywords
layer
type
diffused
depth
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6974980A
Other languages
Japanese (ja)
Inventor
Yasuo Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6974980A priority Critical patent/JPS56165374A/en
Publication of JPS56165374A publication Critical patent/JPS56165374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To enhance reliability and to make mass production possible by sequentially growing first - fourh semiconductor layers on a semiconductor substrate, and forming a P type selectively diffused impurity layer and a P type fully diffused impurity layer. CONSTITUTION:On the N type GaAs substrate 1, are sequentially grown the N type Al0.3Ga0.7As layer 2, the P type Al0.05Ga0.95As layer 3, the P type Al0.3Ga0.7As layer 4, and the N type Al0.15Ga0.85As layer 5. Zn is selectively diffused from the surface of th fourth layer 5 with an oxide film as a mask. At this time, the depth is controlled so that the tip of the diffused layer 6 slightly enters into the third layer 4. Then, the oxide film is removed, and the diffused layer 7 with a depth of 0.5 is formed all over the surface of the fourth layer 5. Then, the side of the GaAs substrate 1 is polished and etched to a suitable depth, electrodes 8 and 9 are attached to both sides, and a hole 50 to take out light is provided in the hole 9.
JP6974980A 1980-05-26 1980-05-26 Light emitting diode Pending JPS56165374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6974980A JPS56165374A (en) 1980-05-26 1980-05-26 Light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6974980A JPS56165374A (en) 1980-05-26 1980-05-26 Light emitting diode

Publications (1)

Publication Number Publication Date
JPS56165374A true JPS56165374A (en) 1981-12-18

Family

ID=13411751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6974980A Pending JPS56165374A (en) 1980-05-26 1980-05-26 Light emitting diode

Country Status (1)

Country Link
JP (1) JPS56165374A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129487A (en) * 1973-04-10 1974-12-11
JPS5330885A (en) * 1976-09-03 1978-03-23 Mitsubishi Electric Corp Production of semiconductor light emitting element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49129487A (en) * 1973-04-10 1974-12-11
JPS5330885A (en) * 1976-09-03 1978-03-23 Mitsubishi Electric Corp Production of semiconductor light emitting element

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