JPS56161666A - Manufacture of resistor - Google Patents
Manufacture of resistorInfo
- Publication number
- JPS56161666A JPS56161666A JP6555180A JP6555180A JPS56161666A JP S56161666 A JPS56161666 A JP S56161666A JP 6555180 A JP6555180 A JP 6555180A JP 6555180 A JP6555180 A JP 6555180A JP S56161666 A JPS56161666 A JP S56161666A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- laser
- impurity
- resistor
- conductive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 4
- 238000002347 injection Methods 0.000 abstract 3
- 239000007924 injection Substances 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000005224 laser annealing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To form high resistance having a low resistance to temperature coefficient for an integrated circuit by injecting high density reverse conductive type impurity ions in the limited region on the surface of a semiconductor and annealing it with a laser to form a resistor. CONSTITUTION:In an integrated circuit, a resistor used for a load or a constant current source or the like is formed by an ion injection process. The ion injection condition is set at energy so that the spead (2DELTARP) of the impurity is less than 500Angstrom and is set at dosage so that the surface density of the reverse conductive type impurity is higher than 10<19>cm<-3>. The heat treatmend conducted after the injection is performed by locally heating by the radiation of a laser or electron beam so that the impurity may not be widely diffused out of the injected region. The injecting condition and the sheet resistance value after the laser annealing are listed for boron and phosphorus in a table, and the resistant to temperature coefficient can be decreased larger as the surface density is increased larger. Thus, high resistance for the integrated circuit can be formed with preferable temperature characteristics and can be particularly adapted for low current circuit or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6555180A JPS56161666A (en) | 1980-05-16 | 1980-05-16 | Manufacture of resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6555180A JPS56161666A (en) | 1980-05-16 | 1980-05-16 | Manufacture of resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56161666A true JPS56161666A (en) | 1981-12-12 |
Family
ID=13290254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6555180A Pending JPS56161666A (en) | 1980-05-16 | 1980-05-16 | Manufacture of resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56161666A (en) |
-
1980
- 1980-05-16 JP JP6555180A patent/JPS56161666A/en active Pending
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