JPS56157063A - Manufacture of mis type semiconductor device - Google Patents

Manufacture of mis type semiconductor device

Info

Publication number
JPS56157063A
JPS56157063A JP6024880A JP6024880A JPS56157063A JP S56157063 A JPS56157063 A JP S56157063A JP 6024880 A JP6024880 A JP 6024880A JP 6024880 A JP6024880 A JP 6024880A JP S56157063 A JPS56157063 A JP S56157063A
Authority
JP
Japan
Prior art keywords
supplied
semiconductor substrate
insulating film
compound semiconductor
hydrogen chloride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6024880A
Other languages
Japanese (ja)
Other versions
JPS6161547B2 (en
Inventor
Masamichi Okamura
Takeshi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6024880A priority Critical patent/JPS56157063A/en
Publication of JPS56157063A publication Critical patent/JPS56157063A/en
Publication of JPS6161547B2 publication Critical patent/JPS6161547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain a desirable drain current characteristic by a method wherein an insulating film is formed on a new surface of the compound semiconductor substrate. CONSTITUTION:The inside of a reaction furnace 43 is exhausted and supplied with inactive gas from an inactive gas source 31 and further, supplied with hydrogen chloride gas from a hydrogen chloride gas source 33. Meanwhile, a heater 41 is commutated to obtain the new surface on the compound semiconductor substrate 44 by a gaseous phase etching using the hydrogen chloride gas. Then, the inactive gas is discharged outside and insulating film forming gas is supplied from an insulting film forming gas source 32 to the reaction furnace 43 to form the insulating film by CVD method on the surface of the compound semiconductor substrate 44.
JP6024880A 1980-05-06 1980-05-06 Manufacture of mis type semiconductor device Granted JPS56157063A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6024880A JPS56157063A (en) 1980-05-06 1980-05-06 Manufacture of mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6024880A JPS56157063A (en) 1980-05-06 1980-05-06 Manufacture of mis type semiconductor device

Publications (2)

Publication Number Publication Date
JPS56157063A true JPS56157063A (en) 1981-12-04
JPS6161547B2 JPS6161547B2 (en) 1986-12-26

Family

ID=13136679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6024880A Granted JPS56157063A (en) 1980-05-06 1980-05-06 Manufacture of mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56157063A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010067525A1 (en) * 2008-12-08 2010-06-17 住友化学株式会社 Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010067525A1 (en) * 2008-12-08 2010-06-17 住友化学株式会社 Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate
JP2010161349A (en) * 2008-12-08 2010-07-22 Sumitomo Chemical Co Ltd Semiconductor device, method of manufacturing the semiconductor device, semiconductor substrate, and method of manufacturing the semiconductor substrate
CN102239549A (en) * 2008-12-08 2011-11-09 住友化学株式会社 Semiconductor device, process for producing semiconductor device, semiconductor substrate, and process for producing semiconductor substrate

Also Published As

Publication number Publication date
JPS6161547B2 (en) 1986-12-26

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