JPS561562A - Electrostatic induction type semiconductor logic circuit device - Google Patents
Electrostatic induction type semiconductor logic circuit deviceInfo
- Publication number
- JPS561562A JPS561562A JP7587479A JP7587479A JPS561562A JP S561562 A JPS561562 A JP S561562A JP 7587479 A JP7587479 A JP 7587479A JP 7587479 A JP7587479 A JP 7587479A JP S561562 A JPS561562 A JP S561562A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layers
- sitl
- sit
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006698 induction Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7587479A JPS561562A (en) | 1979-06-15 | 1979-06-15 | Electrostatic induction type semiconductor logic circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7587479A JPS561562A (en) | 1979-06-15 | 1979-06-15 | Electrostatic induction type semiconductor logic circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS561562A true JPS561562A (en) | 1981-01-09 |
Family
ID=13588846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7587479A Pending JPS561562A (en) | 1979-06-15 | 1979-06-15 | Electrostatic induction type semiconductor logic circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS561562A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58118902A (ja) * | 1982-01-07 | 1983-07-15 | Touyoko Erumesu:Kk | 構造物の鉛直変位量およびたわみ量を測定する方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5215255A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Integrated semiconductor logical circuit |
-
1979
- 1979-06-15 JP JP7587479A patent/JPS561562A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5215255A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Integrated semiconductor logical circuit |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58118902A (ja) * | 1982-01-07 | 1983-07-15 | Touyoko Erumesu:Kk | 構造物の鉛直変位量およびたわみ量を測定する方法 |
JPH0447244B2 (ja) * | 1982-01-07 | 1992-08-03 | Toyoko Erumesu Kk |
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