JPS56155542A - Field-effect semiconductor device and measuring method thereof - Google Patents
Field-effect semiconductor device and measuring method thereofInfo
- Publication number
- JPS56155542A JPS56155542A JP1647181A JP1647181A JPS56155542A JP S56155542 A JPS56155542 A JP S56155542A JP 1647181 A JP1647181 A JP 1647181A JP 1647181 A JP1647181 A JP 1647181A JP S56155542 A JPS56155542 A JP S56155542A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- insulating film
- source
- same
- bvp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1647181A JPS56155542A (en) | 1981-02-06 | 1981-02-06 | Field-effect semiconductor device and measuring method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1647181A JPS56155542A (en) | 1981-02-06 | 1981-02-06 | Field-effect semiconductor device and measuring method thereof |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP49115881A Division JPS5142479A (ko) | 1974-10-08 | 1974-10-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56155542A true JPS56155542A (en) | 1981-12-01 |
JPS6242378B2 JPS6242378B2 (ko) | 1987-09-08 |
Family
ID=11917173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1647181A Granted JPS56155542A (en) | 1981-02-06 | 1981-02-06 | Field-effect semiconductor device and measuring method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56155542A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4760032A (en) * | 1987-05-29 | 1988-07-26 | Sgs-Thomson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
US4860079A (en) * | 1987-05-29 | 1989-08-22 | Sgs-Thompson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
-
1981
- 1981-02-06 JP JP1647181A patent/JPS56155542A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4760032A (en) * | 1987-05-29 | 1988-07-26 | Sgs-Thomson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
US4860079A (en) * | 1987-05-29 | 1989-08-22 | Sgs-Thompson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
Also Published As
Publication number | Publication date |
---|---|
JPS6242378B2 (ko) | 1987-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53128281A (en) | Insulated gate field effect type semiconductor device for large power | |
JPS5368581A (en) | Semiconductor device | |
JPS5366181A (en) | High dielectric strength mis type transistor | |
JPS53980A (en) | Field-effect transistor of high dielectric strength | |
EP0307973A3 (en) | An isfet chip suitable to be used in an apparatus comprising a measuring circuit for selectively measuring ions in a liquid | |
JPS5633822A (en) | Preparation of semiconductor device | |
JPS56155542A (en) | Field-effect semiconductor device and measuring method thereof | |
JPS5248475A (en) | Semiconductor device | |
JPS5426667A (en) | Measuring method for various parameters of field effect transistor | |
JPS5418683A (en) | Manufacture of semiconductor device | |
JPS54986A (en) | Reducing method of voltage dependancy for fet output capacity | |
DE2860611D1 (en) | Process for the generation of windows having stepped edges within material layers of insulating material or of material for electrodes for the production of an integrated semiconductor circuit and mis field-effect transistor with short channel length produced by this process | |
JPS56105665A (en) | Semiconductor memory device | |
JPS53118981A (en) | Semiconductor device | |
JPS5772386A (en) | Junction type field-effect semiconductor device | |
JPS5423478A (en) | Semiconductor device of field effect type | |
JPS6461059A (en) | Semiconductor device | |
JPS54121068A (en) | Measuring method for semiconductor device | |
JPS5245286A (en) | Manufcturing method of field effect transistor of silicon gate type | |
JPS57100768A (en) | Manufacture of field effect semiconductor device | |
JPS5423382A (en) | Measuring method for effective channel length of field effect transistor | |
JPS5386583A (en) | Mos type semiconductor device and its production | |
JPS5662372A (en) | Junction type field effect semiconductor device | |
JPS5425677A (en) | Manufacture for semiconductor integrated circuit | |
JPS5672340A (en) | Usage of fet sensor |