JPS56155542A - Field-effect semiconductor device and measuring method thereof - Google Patents

Field-effect semiconductor device and measuring method thereof

Info

Publication number
JPS56155542A
JPS56155542A JP1647181A JP1647181A JPS56155542A JP S56155542 A JPS56155542 A JP S56155542A JP 1647181 A JP1647181 A JP 1647181A JP 1647181 A JP1647181 A JP 1647181A JP S56155542 A JPS56155542 A JP S56155542A
Authority
JP
Japan
Prior art keywords
fet
insulating film
source
same
bvp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1647181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6242378B2 (enExample
Inventor
Keiji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1647181A priority Critical patent/JPS56155542A/ja
Publication of JPS56155542A publication Critical patent/JPS56155542A/ja
Publication of JPS6242378B2 publication Critical patent/JPS6242378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP1647181A 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof Granted JPS56155542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1647181A JPS56155542A (en) 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1647181A JPS56155542A (en) 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP49115881A Division JPS5142479A (enExample) 1974-10-08 1974-10-08

Publications (2)

Publication Number Publication Date
JPS56155542A true JPS56155542A (en) 1981-12-01
JPS6242378B2 JPS6242378B2 (enExample) 1987-09-08

Family

ID=11917173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1647181A Granted JPS56155542A (en) 1981-02-06 1981-02-06 Field-effect semiconductor device and measuring method thereof

Country Status (1)

Country Link
JP (1) JPS56155542A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760032A (en) * 1987-05-29 1988-07-26 Sgs-Thomson Microelectronics, Inc. Screening of gate oxides on semiconductors
US4860079A (en) * 1987-05-29 1989-08-22 Sgs-Thompson Microelectronics, Inc. Screening of gate oxides on semiconductors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760032A (en) * 1987-05-29 1988-07-26 Sgs-Thomson Microelectronics, Inc. Screening of gate oxides on semiconductors
US4860079A (en) * 1987-05-29 1989-08-22 Sgs-Thompson Microelectronics, Inc. Screening of gate oxides on semiconductors

Also Published As

Publication number Publication date
JPS6242378B2 (enExample) 1987-09-08

Similar Documents

Publication Publication Date Title
JPS53128281A (en) Insulated gate field effect type semiconductor device for large power
JPS5368581A (en) Semiconductor device
JPS5366181A (en) High dielectric strength mis type transistor
JPS5688363A (en) Field effect transistor
EP0307973A3 (en) An isfet chip suitable to be used in an apparatus comprising a measuring circuit for selectively measuring ions in a liquid
JPS53980A (en) Field-effect transistor of high dielectric strength
JPS5633822A (en) Preparation of semiconductor device
JPS56155542A (en) Field-effect semiconductor device and measuring method thereof
JPS5713764A (en) Charge detector
JPS5248475A (en) Semiconductor device
JPS5426667A (en) Measuring method for various parameters of field effect transistor
JPS5418683A (en) Manufacture of semiconductor device
JPS54986A (en) Reducing method of voltage dependancy for fet output capacity
JPS56105665A (en) Semiconductor memory device
JPS53118981A (en) Semiconductor device
JPS5772386A (en) Junction type field-effect semiconductor device
JPS5423478A (en) Semiconductor device of field effect type
JPS54121068A (en) Measuring method for semiconductor device
JPS5662372A (en) Junction type field effect semiconductor device
JPS5683079A (en) Enhancement type filed-effect transistor
JPS5245286A (en) Manufcturing method of field effect transistor of silicon gate type
JPS5656666A (en) Mos integrated circuit device and preparation thereof
JPS5423382A (en) Measuring method for effective channel length of field effect transistor
JPS5386583A (en) Mos type semiconductor device and its production
JPS5425677A (en) Manufacture for semiconductor integrated circuit