JPS56147520A - Field effect transistor with low threshold voltage formed as integrated circuit and inverter using switching diode - Google Patents

Field effect transistor with low threshold voltage formed as integrated circuit and inverter using switching diode

Info

Publication number
JPS56147520A
JPS56147520A JP4157381A JP4157381A JPS56147520A JP S56147520 A JPS56147520 A JP S56147520A JP 4157381 A JP4157381 A JP 4157381A JP 4157381 A JP4157381 A JP 4157381A JP S56147520 A JPS56147520 A JP S56147520A
Authority
JP
Japan
Prior art keywords
inverter
integrated circuit
threshold voltage
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4157381A
Other languages
English (en)
Japanese (ja)
Inventor
Beeru Jiyorujiyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS56147520A publication Critical patent/JPS56147520A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
JP4157381A 1980-03-21 1981-03-20 Field effect transistor with low threshold voltage formed as integrated circuit and inverter using switching diode Pending JPS56147520A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8006402A FR2478907A1 (fr) 1980-03-21 1980-03-21 Inverseur utilisant des transistors a effet de champ a faible tension de seuil et une diode de commutation, realise en circuit integre, et circuit logique comportant un tel inverseur

Publications (1)

Publication Number Publication Date
JPS56147520A true JPS56147520A (en) 1981-11-16

Family

ID=9239969

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4157381A Pending JPS56147520A (en) 1980-03-21 1981-03-20 Field effect transistor with low threshold voltage formed as integrated circuit and inverter using switching diode

Country Status (5)

Country Link
US (1) US4434379A (OSRAM)
EP (1) EP0036791B1 (OSRAM)
JP (1) JPS56147520A (OSRAM)
DE (1) DE3161569D1 (OSRAM)
FR (1) FR2478907A1 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725743A (en) * 1986-04-25 1988-02-16 International Business Machines Corporation Two-stage digital logic circuits including an input switching stage and an output driving stage incorporating gallium arsenide FET devices
CN109920842A (zh) * 2019-02-22 2019-06-21 中国科学院微电子研究所 冷源结构mos晶体管及其制作方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3299291A (en) 1964-02-18 1967-01-17 Motorola Inc Logic elements using field-effect transistors in source follower configuration
FR2264434B1 (OSRAM) * 1974-03-12 1976-07-16 Thomson Csf
US4177390A (en) * 1977-12-27 1979-12-04 Raytheon Company A field effect transistor logic gate having depletion mode and enhancement mode transistors

Also Published As

Publication number Publication date
EP0036791B1 (fr) 1983-12-07
FR2478907A1 (fr) 1981-09-25
FR2478907B1 (OSRAM) 1984-04-13
DE3161569D1 (en) 1984-01-12
US4434379A (en) 1984-02-28
EP0036791A1 (fr) 1981-09-30

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