FR2478907B1 - - Google Patents
Info
- Publication number
- FR2478907B1 FR2478907B1 FR8006402A FR8006402A FR2478907B1 FR 2478907 B1 FR2478907 B1 FR 2478907B1 FR 8006402 A FR8006402 A FR 8006402A FR 8006402 A FR8006402 A FR 8006402A FR 2478907 B1 FR2478907 B1 FR 2478907B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8006402A FR2478907A1 (fr) | 1980-03-21 | 1980-03-21 | Inverseur utilisant des transistors a effet de champ a faible tension de seuil et une diode de commutation, realise en circuit integre, et circuit logique comportant un tel inverseur |
| EP81400271A EP0036791B1 (fr) | 1980-03-21 | 1981-02-20 | Inverseur utilisant des transistors à effet de champ à faible tension de seuil et une diode de commutation |
| DE8181400271T DE3161569D1 (en) | 1980-03-21 | 1981-02-20 | Inverter using low threshold field effect transistors and a switching diode |
| US06/244,873 US4434379A (en) | 1980-03-21 | 1981-03-18 | Inverter using low-threshold-voltage field-effect transistors and a switching diode, formed as an integrated circuit |
| JP4157381A JPS56147520A (en) | 1980-03-21 | 1981-03-20 | Field effect transistor with low threshold voltage formed as integrated circuit and inverter using switching diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8006402A FR2478907A1 (fr) | 1980-03-21 | 1980-03-21 | Inverseur utilisant des transistors a effet de champ a faible tension de seuil et une diode de commutation, realise en circuit integre, et circuit logique comportant un tel inverseur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2478907A1 FR2478907A1 (fr) | 1981-09-25 |
| FR2478907B1 true FR2478907B1 (OSRAM) | 1984-04-13 |
Family
ID=9239969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8006402A Granted FR2478907A1 (fr) | 1980-03-21 | 1980-03-21 | Inverseur utilisant des transistors a effet de champ a faible tension de seuil et une diode de commutation, realise en circuit integre, et circuit logique comportant un tel inverseur |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4434379A (OSRAM) |
| EP (1) | EP0036791B1 (OSRAM) |
| JP (1) | JPS56147520A (OSRAM) |
| DE (1) | DE3161569D1 (OSRAM) |
| FR (1) | FR2478907A1 (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4725743A (en) * | 1986-04-25 | 1988-02-16 | International Business Machines Corporation | Two-stage digital logic circuits including an input switching stage and an output driving stage incorporating gallium arsenide FET devices |
| CN109920842A (zh) * | 2019-02-22 | 2019-06-21 | 中国科学院微电子研究所 | 冷源结构mos晶体管及其制作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3299291A (en) | 1964-02-18 | 1967-01-17 | Motorola Inc | Logic elements using field-effect transistors in source follower configuration |
| FR2264434B1 (OSRAM) * | 1974-03-12 | 1976-07-16 | Thomson Csf | |
| US4177390A (en) * | 1977-12-27 | 1979-12-04 | Raytheon Company | A field effect transistor logic gate having depletion mode and enhancement mode transistors |
-
1980
- 1980-03-21 FR FR8006402A patent/FR2478907A1/fr active Granted
-
1981
- 1981-02-20 DE DE8181400271T patent/DE3161569D1/de not_active Expired
- 1981-02-20 EP EP81400271A patent/EP0036791B1/fr not_active Expired
- 1981-03-18 US US06/244,873 patent/US4434379A/en not_active Expired - Fee Related
- 1981-03-20 JP JP4157381A patent/JPS56147520A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0036791B1 (fr) | 1983-12-07 |
| FR2478907A1 (fr) | 1981-09-25 |
| JPS56147520A (en) | 1981-11-16 |
| DE3161569D1 (en) | 1984-01-12 |
| US4434379A (en) | 1984-02-28 |
| EP0036791A1 (fr) | 1981-09-30 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CL | Concession to grant licences | ||
| ST | Notification of lapse |