JPS56137354A - Mask forming method - Google Patents

Mask forming method

Info

Publication number
JPS56137354A
JPS56137354A JP4008380A JP4008380A JPS56137354A JP S56137354 A JPS56137354 A JP S56137354A JP 4008380 A JP4008380 A JP 4008380A JP 4008380 A JP4008380 A JP 4008380A JP S56137354 A JPS56137354 A JP S56137354A
Authority
JP
Japan
Prior art keywords
substrate
etching
mask
hydrophobic resist
soln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4008380A
Other languages
Japanese (ja)
Inventor
Toshiaki Tsurushima
Nobuji Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4008380A priority Critical patent/JPS56137354A/en
Publication of JPS56137354A publication Critical patent/JPS56137354A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To extremely lower the defect density of a mask by spraying an etching soln. on the central part of a mask substrate while rotating the substrate to perform perfect etching when a highly hydrophobic resist is used. CONSTITUTION:When the metallic thin film of a mask substrate is etched in a process of coating the substrate with a highly hydrophobic resist such as polymethylmethacrylate (PMMA) and forming a pattern, the substrate is held by suction with a vacuum chuck and rotated at 400r.p.m. speed, and an etching soln. is sprayed on the central part of the substrate from a spray nozzle to etch the chromium/chromium oxide film. The etching soln. contains ceric ammonium nitrate as a principal component. This method is applicable to other hydrophobic resist and to etching with X-rays or ultraviolet rays.
JP4008380A 1980-03-28 1980-03-28 Mask forming method Pending JPS56137354A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4008380A JPS56137354A (en) 1980-03-28 1980-03-28 Mask forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4008380A JPS56137354A (en) 1980-03-28 1980-03-28 Mask forming method

Publications (1)

Publication Number Publication Date
JPS56137354A true JPS56137354A (en) 1981-10-27

Family

ID=12570999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4008380A Pending JPS56137354A (en) 1980-03-28 1980-03-28 Mask forming method

Country Status (1)

Country Link
JP (1) JPS56137354A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598340A (en) * 1982-07-06 1984-01-17 Mitsubishi Electric Corp Forming method for protective film of semiconductor device
WO1998033847A1 (en) * 1997-01-31 1998-08-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. How to modify substrate polymer or copolymer surfaces containing methacrylate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS598340A (en) * 1982-07-06 1984-01-17 Mitsubishi Electric Corp Forming method for protective film of semiconductor device
WO1998033847A1 (en) * 1997-01-31 1998-08-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. How to modify substrate polymer or copolymer surfaces containing methacrylate

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