JPS56136646A - Treating apparatus for surface of microwave plasma - Google Patents

Treating apparatus for surface of microwave plasma

Info

Publication number
JPS56136646A
JPS56136646A JP3756180A JP3756180A JPS56136646A JP S56136646 A JPS56136646 A JP S56136646A JP 3756180 A JP3756180 A JP 3756180A JP 3756180 A JP3756180 A JP 3756180A JP S56136646 A JPS56136646 A JP S56136646A
Authority
JP
Japan
Prior art keywords
antenna
sample
gas
plasma
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3756180A
Other languages
Japanese (ja)
Inventor
Masahiko Hirose
Takeshi Yasui
Masahiko Yotsuyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3756180A priority Critical patent/JPS56136646A/en
Publication of JPS56136646A publication Critical patent/JPS56136646A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

PURPOSE:To facilitate controlling of treating conditions and perform surface treatment efficiently by introducing microwaves into tightly closed vessel by using a conductive antenna to form plasma and applying voltage to the object to be treated from the outside. CONSTITUTION:The microwaves transmitted through a waveguide 2 are taken out by an antenna 22 made of copper pipe and are introduced into a tightly closed vessel 5. A cooling gas 25 such as nonoxidative gas is flowed into this antenna 22, thereby cooling the antenna 22 and a cylindrical body 23 enclosing the antenna. The inside of said vessel 5 is exhausted and a treating gas is introduced therein; at the same time, microwave electric power is introduced therein to produce plasma 26. Further, prescribed DC voltage is applied to a sample 16 from an external power source 17, whereby the surface of the sample 16 is subjected to nitriding treatment or the like. If the ion current flowing in the sample is controlled by changing this applied voltage, the temp. of the sample 16 is set at a prescribed value without giving any significant influence upon the formed plasma.
JP3756180A 1980-03-26 1980-03-26 Treating apparatus for surface of microwave plasma Pending JPS56136646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3756180A JPS56136646A (en) 1980-03-26 1980-03-26 Treating apparatus for surface of microwave plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3756180A JPS56136646A (en) 1980-03-26 1980-03-26 Treating apparatus for surface of microwave plasma

Publications (1)

Publication Number Publication Date
JPS56136646A true JPS56136646A (en) 1981-10-26

Family

ID=12500921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3756180A Pending JPS56136646A (en) 1980-03-26 1980-03-26 Treating apparatus for surface of microwave plasma

Country Status (1)

Country Link
JP (1) JPS56136646A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889942A (en) * 1981-11-24 1983-05-28 Canon Inc Producing device for deposited film
JPS58109132A (en) * 1981-12-22 1983-06-29 Canon Inc Plasma cvd device provided with capturing device for fine powder
WO1998059359A1 (en) * 1997-06-23 1998-12-30 Sung Spitzl Hildegard Device for the production of homogenous microwave plasma
DE102006048814A1 (en) * 2006-10-16 2008-04-17 Iplas Innovative Plasma Systems Gmbh Apparatus and method for generating high plasma density microwave plasmas
DE102006048815A1 (en) * 2006-10-16 2008-04-17 Iplas Innovative Plasma Systems Gmbh Apparatus and method for generating high power microwave plasmas
CN108303216A (en) * 2018-01-02 2018-07-20 京东方科技集团股份有限公司 A kind of gas-detecting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5889942A (en) * 1981-11-24 1983-05-28 Canon Inc Producing device for deposited film
JPS58109132A (en) * 1981-12-22 1983-06-29 Canon Inc Plasma cvd device provided with capturing device for fine powder
WO1998059359A1 (en) * 1997-06-23 1998-12-30 Sung Spitzl Hildegard Device for the production of homogenous microwave plasma
US6543380B1 (en) 1997-06-23 2003-04-08 Hildegard Sung-Spitzl Device for the production of homogenous microwave plasma
DE102006048814A1 (en) * 2006-10-16 2008-04-17 Iplas Innovative Plasma Systems Gmbh Apparatus and method for generating high plasma density microwave plasmas
DE102006048815A1 (en) * 2006-10-16 2008-04-17 Iplas Innovative Plasma Systems Gmbh Apparatus and method for generating high power microwave plasmas
DE102006048814B4 (en) * 2006-10-16 2014-01-16 Iplas Innovative Plasma Systems Gmbh Apparatus and method for generating high plasma density microwave plasmas
DE102006048815B4 (en) * 2006-10-16 2016-03-17 Iplas Innovative Plasma Systems Gmbh Apparatus and method for generating high power microwave plasmas
CN108303216A (en) * 2018-01-02 2018-07-20 京东方科技集团股份有限公司 A kind of gas-detecting device

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