JPS56135981A - Photoelectric conversion element - Google Patents

Photoelectric conversion element

Info

Publication number
JPS56135981A
JPS56135981A JP4006580A JP4006580A JPS56135981A JP S56135981 A JPS56135981 A JP S56135981A JP 4006580 A JP4006580 A JP 4006580A JP 4006580 A JP4006580 A JP 4006580A JP S56135981 A JPS56135981 A JP S56135981A
Authority
JP
Japan
Prior art keywords
electrodes
light
photoelectric conversion
conversion element
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4006580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152580B2 (enrdf_load_stackoverflow
Inventor
Toshiyuki Komatsu
Masaki Fukaya
Shunichi Uzawa
Seishiro Yoshioka
Yoshiaki Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP4006580A priority Critical patent/JPS56135981A/ja
Publication of JPS56135981A publication Critical patent/JPS56135981A/ja
Publication of JPS6152580B2 publication Critical patent/JPS6152580B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
JP4006580A 1980-03-28 1980-03-28 Photoelectric conversion element Granted JPS56135981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4006580A JPS56135981A (en) 1980-03-28 1980-03-28 Photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4006580A JPS56135981A (en) 1980-03-28 1980-03-28 Photoelectric conversion element

Publications (2)

Publication Number Publication Date
JPS56135981A true JPS56135981A (en) 1981-10-23
JPS6152580B2 JPS6152580B2 (enrdf_load_stackoverflow) 1986-11-13

Family

ID=12570518

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4006580A Granted JPS56135981A (en) 1980-03-28 1980-03-28 Photoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS56135981A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118143A (ja) * 1982-01-06 1983-07-14 Semiconductor Energy Lab Co Ltd 半導体装置
JPS5919372A (ja) * 1982-07-16 1984-01-31 ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレ−シヨン 集積光感応mos半導体回路
JPS6182466A (ja) * 1984-09-29 1986-04-26 Toshiba Corp 光センサ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118143A (ja) * 1982-01-06 1983-07-14 Semiconductor Energy Lab Co Ltd 半導体装置
JPS5919372A (ja) * 1982-07-16 1984-01-31 ナシヨナル・エアロノ−テイツクス・アンド・スペ−ス・アドミニストレ−シヨン 集積光感応mos半導体回路
JPS6182466A (ja) * 1984-09-29 1986-04-26 Toshiba Corp 光センサ

Also Published As

Publication number Publication date
JPS6152580B2 (enrdf_load_stackoverflow) 1986-11-13

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