JPS56133868A - Manufacture of mos type semiconductor device - Google Patents
Manufacture of mos type semiconductor deviceInfo
- Publication number
- JPS56133868A JPS56133868A JP3490780A JP3490780A JPS56133868A JP S56133868 A JPS56133868 A JP S56133868A JP 3490780 A JP3490780 A JP 3490780A JP 3490780 A JP3490780 A JP 3490780A JP S56133868 A JPS56133868 A JP S56133868A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon layer
- gate electrode
- mask regions
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3490780A JPS56133868A (en) | 1980-03-21 | 1980-03-21 | Manufacture of mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3490780A JPS56133868A (en) | 1980-03-21 | 1980-03-21 | Manufacture of mos type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56133868A true JPS56133868A (en) | 1981-10-20 |
| JPS6161546B2 JPS6161546B2 (ja) | 1986-12-26 |
Family
ID=12427261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3490780A Granted JPS56133868A (en) | 1980-03-21 | 1980-03-21 | Manufacture of mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56133868A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01207974A (ja) * | 1988-02-16 | 1989-08-21 | Seiko Epson Corp | Ｍｏｓ型半導体装置の製造方法 |
-
1980
- 1980-03-21 JP JP3490780A patent/JPS56133868A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01207974A (ja) * | 1988-02-16 | 1989-08-21 | Seiko Epson Corp | Ｍｏｓ型半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6161546B2 (ja) | 1986-12-26 |
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