JPS56130749A - Photomask for projective exposure - Google Patents

Photomask for projective exposure

Info

Publication number
JPS56130749A
JPS56130749A JP3444880A JP3444880A JPS56130749A JP S56130749 A JPS56130749 A JP S56130749A JP 3444880 A JP3444880 A JP 3444880A JP 3444880 A JP3444880 A JP 3444880A JP S56130749 A JPS56130749 A JP S56130749A
Authority
JP
Japan
Prior art keywords
cover glass
mask
photomask
transparent liquid
lowering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3444880A
Other languages
Japanese (ja)
Inventor
Keizo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3444880A priority Critical patent/JPS56130749A/en
Publication of JPS56130749A publication Critical patent/JPS56130749A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To prevent dewing on the pattern surface of a photomask for projective exposure and to minimize the lowering of illuminance, by filling the gap between the photomask and cover glass with a transparent liquid. CONSTITUTION:To frame 12 provided outside of active pattern region 11 of mask 10, cover glass 14 is stuck and in the internal space formed of them, transparent liquid 15 is injected and sealed. Since the gap between mask substrate 10 and cover glass 14 is filled with transparent liquid 15 with a nearly equal refractive index, reflection on the mask surface can nearly be eliminated. Further, since the pattern surface of the mask is not exposed to the air, no dewing occurs and the lowering of illuminance due to the stucked cover glass can be minimized.
JP3444880A 1980-03-18 1980-03-18 Photomask for projective exposure Pending JPS56130749A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3444880A JPS56130749A (en) 1980-03-18 1980-03-18 Photomask for projective exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3444880A JPS56130749A (en) 1980-03-18 1980-03-18 Photomask for projective exposure

Publications (1)

Publication Number Publication Date
JPS56130749A true JPS56130749A (en) 1981-10-13

Family

ID=12414526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3444880A Pending JPS56130749A (en) 1980-03-18 1980-03-18 Photomask for projective exposure

Country Status (1)

Country Link
JP (1) JPS56130749A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154242A (en) * 1981-01-05 1982-09-24 Western Electric Co Photomask and manufacture thereof
JPS57188039A (en) * 1981-02-17 1982-11-18 Sensaa Patent Unto Fueruzuufus Projection mask, production unit therefor, projection printing system and method of protecting pattern on glass substrate
US4405701A (en) * 1981-07-29 1983-09-20 Western Electric Co. Methods of fabricating a photomask
JPS6257260U (en) * 1985-09-26 1987-04-09
EP0418427A2 (en) * 1989-09-06 1991-03-27 Eiichi Miyake Exposure process
KR100702929B1 (en) * 2003-02-03 2007-04-05 가부시끼가이샤 도시바 Exposure method, and method of fabricating a semiconductor device using the same
JP2008104518A (en) * 2006-10-23 2008-05-08 Ito Choutanpa Kk Electrode and electronic treatment device equipped with the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57154242A (en) * 1981-01-05 1982-09-24 Western Electric Co Photomask and manufacture thereof
JPH0213780B2 (en) * 1981-01-05 1990-04-05 Ei Teii Ando Teii Tekunorojiizu Inc
JPS57188039A (en) * 1981-02-17 1982-11-18 Sensaa Patent Unto Fueruzuufus Projection mask, production unit therefor, projection printing system and method of protecting pattern on glass substrate
JPS6332379B2 (en) * 1981-02-17 1988-06-29 Tsuenzooru Patento Unto Fueazuufusu Anshutaruto
US4405701A (en) * 1981-07-29 1983-09-20 Western Electric Co. Methods of fabricating a photomask
JPS6257260U (en) * 1985-09-26 1987-04-09
EP0418427A2 (en) * 1989-09-06 1991-03-27 Eiichi Miyake Exposure process
KR100702929B1 (en) * 2003-02-03 2007-04-05 가부시끼가이샤 도시바 Exposure method, and method of fabricating a semiconductor device using the same
JP2008104518A (en) * 2006-10-23 2008-05-08 Ito Choutanpa Kk Electrode and electronic treatment device equipped with the same

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