JPS56129340A - Method of dividing platelike material - Google Patents
Method of dividing platelike materialInfo
- Publication number
- JPS56129340A JPS56129340A JP3186280A JP3186280A JPS56129340A JP S56129340 A JPS56129340 A JP S56129340A JP 3186280 A JP3186280 A JP 3186280A JP 3186280 A JP3186280 A JP 3186280A JP S56129340 A JPS56129340 A JP S56129340A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- wafer
- beams
- elements
- platelike
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052594 sapphire Inorganic materials 0.000 abstract 2
- 239000010980 sapphire Substances 0.000 abstract 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/009—Working by laser beam, e.g. welding, cutting or boring using a non-absorbing, e.g. transparent, reflective or refractive, layer on the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3186280A JPS56129340A (en) | 1980-03-13 | 1980-03-13 | Method of dividing platelike material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3186280A JPS56129340A (en) | 1980-03-13 | 1980-03-13 | Method of dividing platelike material |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56129340A true JPS56129340A (en) | 1981-10-09 |
JPS6239539B2 JPS6239539B2 (ko) | 1987-08-24 |
Family
ID=12342853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3186280A Granted JPS56129340A (en) | 1980-03-13 | 1980-03-13 | Method of dividing platelike material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56129340A (ko) |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63295093A (ja) * | 1987-01-30 | 1988-12-01 | ウアルター・ダブリユ・ダーレイ | 金属のレーザー加工効率を向上させる手段 |
JPS6424469A (en) * | 1987-07-20 | 1989-01-26 | Sanyo Electric Co | Photosensor manufacturing equipment |
JPH01266983A (ja) * | 1988-04-20 | 1989-10-24 | Hitachi Seiko Ltd | プリント基板穴明機 |
JPH04180649A (ja) * | 1990-11-15 | 1992-06-26 | Nec Yamagata Ltd | 半導体チップサンプリング装置 |
JPH0929472A (ja) * | 1995-07-14 | 1997-02-04 | Hitachi Ltd | 割断方法、割断装置及びチップ材料 |
JP2001179473A (ja) * | 1999-12-24 | 2001-07-03 | Semiconductor Energy Lab Co Ltd | レーザー装置及びレーザー光を用いた基板の分断方法及び半導体装置の作製方法 |
EP1291117A1 (de) * | 2001-09-07 | 2003-03-12 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit Laserstrahlung |
WO2006038713A1 (en) * | 2004-10-07 | 2006-04-13 | Showa Denko K.K. | Production method for semiconductor device |
JP2006203251A (ja) * | 2004-10-07 | 2006-08-03 | Showa Denko Kk | 半導体素子の製造方法 |
JP2007043100A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2007142277A (ja) * | 2005-11-21 | 2007-06-07 | Matsushita Electric Works Ltd | 発光素子の製造方法 |
JP2012039128A (ja) * | 2011-09-20 | 2012-02-23 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法 |
JP2012199399A (ja) * | 2011-03-22 | 2012-10-18 | Panasonic Corp | レーザ加工方法及びレーザ加工装置 |
JP2013058536A (ja) * | 2011-09-07 | 2013-03-28 | Disco Abrasive Syst Ltd | デバイスウェーハの分割方法 |
JP2016025112A (ja) * | 2014-07-16 | 2016-02-08 | 株式会社ディスコ | レーザー切断方法及びレーザー加工装置 |
JP2016030293A (ja) * | 2014-07-29 | 2016-03-07 | 久元電子股▲ふん▼有限公司 | レーザー切断方法及びその装置 |
WO2020090891A1 (ja) * | 2018-10-30 | 2020-05-07 | 浜松ホトニクス株式会社 | レーザ加工装置 |
JP2021163780A (ja) * | 2020-03-30 | 2021-10-11 | 株式会社カネカ | 太陽電池セル、太陽電池モジュール及び太陽電池セル製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138080U (ko) * | 1988-03-15 | 1989-09-21 | ||
JP4851918B2 (ja) * | 2006-11-24 | 2012-01-11 | 株式会社ディスコ | ウエーハのレーザー加工方法およびレーザー加工装置 |
-
1980
- 1980-03-13 JP JP3186280A patent/JPS56129340A/ja active Granted
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63295093A (ja) * | 1987-01-30 | 1988-12-01 | ウアルター・ダブリユ・ダーレイ | 金属のレーザー加工効率を向上させる手段 |
JPS6424469A (en) * | 1987-07-20 | 1989-01-26 | Sanyo Electric Co | Photosensor manufacturing equipment |
JPH01266983A (ja) * | 1988-04-20 | 1989-10-24 | Hitachi Seiko Ltd | プリント基板穴明機 |
JPH04180649A (ja) * | 1990-11-15 | 1992-06-26 | Nec Yamagata Ltd | 半導体チップサンプリング装置 |
JPH0929472A (ja) * | 1995-07-14 | 1997-02-04 | Hitachi Ltd | 割断方法、割断装置及びチップ材料 |
JP2001179473A (ja) * | 1999-12-24 | 2001-07-03 | Semiconductor Energy Lab Co Ltd | レーザー装置及びレーザー光を用いた基板の分断方法及び半導体装置の作製方法 |
EP1291117A1 (de) * | 2001-09-07 | 2003-03-12 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit Laserstrahlung |
EP1520653A1 (de) * | 2001-09-07 | 2005-04-06 | Siemens Aktiengesellschaft | Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit zwei unterschiedlichen Lasern |
US7498184B2 (en) | 2004-10-07 | 2009-03-03 | Showa Denko K.K. | Production method for semiconductor device |
WO2006038713A1 (en) * | 2004-10-07 | 2006-04-13 | Showa Denko K.K. | Production method for semiconductor device |
JP2006203251A (ja) * | 2004-10-07 | 2006-08-03 | Showa Denko Kk | 半導体素子の製造方法 |
JP2007043100A (ja) * | 2005-06-30 | 2007-02-15 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2007142277A (ja) * | 2005-11-21 | 2007-06-07 | Matsushita Electric Works Ltd | 発光素子の製造方法 |
JP2012199399A (ja) * | 2011-03-22 | 2012-10-18 | Panasonic Corp | レーザ加工方法及びレーザ加工装置 |
JP2013058536A (ja) * | 2011-09-07 | 2013-03-28 | Disco Abrasive Syst Ltd | デバイスウェーハの分割方法 |
JP2012039128A (ja) * | 2011-09-20 | 2012-02-23 | Nichia Chem Ind Ltd | 窒化物半導体素子の製造方法 |
JP2016025112A (ja) * | 2014-07-16 | 2016-02-08 | 株式会社ディスコ | レーザー切断方法及びレーザー加工装置 |
JP2016030293A (ja) * | 2014-07-29 | 2016-03-07 | 久元電子股▲ふん▼有限公司 | レーザー切断方法及びその装置 |
WO2020090891A1 (ja) * | 2018-10-30 | 2020-05-07 | 浜松ホトニクス株式会社 | レーザ加工装置 |
JP2021163780A (ja) * | 2020-03-30 | 2021-10-11 | 株式会社カネカ | 太陽電池セル、太陽電池モジュール及び太陽電池セル製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6239539B2 (ko) | 1987-08-24 |
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