JPS56129321A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56129321A JPS56129321A JP3299280A JP3299280A JPS56129321A JP S56129321 A JPS56129321 A JP S56129321A JP 3299280 A JP3299280 A JP 3299280A JP 3299280 A JP3299280 A JP 3299280A JP S56129321 A JPS56129321 A JP S56129321A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- heating
- heated
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P95/90—
-
- H10P34/42—
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3299280A JPS56129321A (en) | 1980-03-14 | 1980-03-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3299280A JPS56129321A (en) | 1980-03-14 | 1980-03-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56129321A true JPS56129321A (en) | 1981-10-09 |
| JPS6250971B2 JPS6250971B2 (cg-RX-API-DMAC10.html) | 1987-10-28 |
Family
ID=12374346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3299280A Granted JPS56129321A (en) | 1980-03-14 | 1980-03-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56129321A (cg-RX-API-DMAC10.html) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5922323A (ja) * | 1982-07-28 | 1984-02-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS60257124A (ja) * | 1984-06-01 | 1985-12-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
| JPS61113768A (ja) * | 1984-11-07 | 1986-05-31 | Mitsubishi Electric Corp | 金属薄膜のアニ−ル方法 |
| JPS6293927A (ja) * | 1985-10-08 | 1987-04-30 | バリアン・アソシエイツ・インコ−ポレイテツド | 固体平板状拡散源の急速熱処理による半導体ウェ−ハのド−ピング方法 |
| US6537864B1 (en) | 1999-10-19 | 2003-03-25 | Sanyo Electric Co., Ltd. | Method of fabricating a thin film transistor using electromagnetic wave heating of an amorphous semiconductor film |
-
1980
- 1980-03-14 JP JP3299280A patent/JPS56129321A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5922323A (ja) * | 1982-07-28 | 1984-02-04 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS60257124A (ja) * | 1984-06-01 | 1985-12-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
| JPS61113768A (ja) * | 1984-11-07 | 1986-05-31 | Mitsubishi Electric Corp | 金属薄膜のアニ−ル方法 |
| JPS6293927A (ja) * | 1985-10-08 | 1987-04-30 | バリアン・アソシエイツ・インコ−ポレイテツド | 固体平板状拡散源の急速熱処理による半導体ウェ−ハのド−ピング方法 |
| US6537864B1 (en) | 1999-10-19 | 2003-03-25 | Sanyo Electric Co., Ltd. | Method of fabricating a thin film transistor using electromagnetic wave heating of an amorphous semiconductor film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6250971B2 (cg-RX-API-DMAC10.html) | 1987-10-28 |
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