JPS56126913A - Growing device for gaseous phase of semiconductor - Google Patents

Growing device for gaseous phase of semiconductor

Info

Publication number
JPS56126913A
JPS56126913A JP3036480A JP3036480A JPS56126913A JP S56126913 A JPS56126913 A JP S56126913A JP 3036480 A JP3036480 A JP 3036480A JP 3036480 A JP3036480 A JP 3036480A JP S56126913 A JPS56126913 A JP S56126913A
Authority
JP
Japan
Prior art keywords
gratings
current direction
knobs
gaseous phase
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3036480A
Other languages
English (en)
Inventor
Takashi Aoyama
Takaya Suzuki
Hironori Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3036480A priority Critical patent/JPS56126913A/ja
Publication of JPS56126913A publication Critical patent/JPS56126913A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP3036480A 1980-03-12 1980-03-12 Growing device for gaseous phase of semiconductor Pending JPS56126913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3036480A JPS56126913A (en) 1980-03-12 1980-03-12 Growing device for gaseous phase of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3036480A JPS56126913A (en) 1980-03-12 1980-03-12 Growing device for gaseous phase of semiconductor

Publications (1)

Publication Number Publication Date
JPS56126913A true JPS56126913A (en) 1981-10-05

Family

ID=12301803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3036480A Pending JPS56126913A (en) 1980-03-12 1980-03-12 Growing device for gaseous phase of semiconductor

Country Status (1)

Country Link
JP (1) JPS56126913A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008544264A (ja) * 2005-06-24 2008-12-04 エーゲーオー エレクトロ・ゲレーテバウ ゲーエムベーハー 調理機器用電気機械式温度検出装置および電気機械式温度検出装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008544264A (ja) * 2005-06-24 2008-12-04 エーゲーオー エレクトロ・ゲレーテバウ ゲーエムベーハー 調理機器用電気機械式温度検出装置および電気機械式温度検出装置の製造方法

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