JPS56114334A - Evaluating method for reliability of surface protecting film of semiconductor element - Google Patents

Evaluating method for reliability of surface protecting film of semiconductor element

Info

Publication number
JPS56114334A
JPS56114334A JP1752980A JP1752980A JPS56114334A JP S56114334 A JPS56114334 A JP S56114334A JP 1752980 A JP1752980 A JP 1752980A JP 1752980 A JP1752980 A JP 1752980A JP S56114334 A JPS56114334 A JP S56114334A
Authority
JP
Japan
Prior art keywords
protecting film
reliability
surface protecting
semiconductor element
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1752980A
Other languages
Japanese (ja)
Inventor
Takao Fujizu
Toshiyuki Matsuo
Katsuya Okumura
Shigeo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1752980A priority Critical patent/JPS56114334A/en
Publication of JPS56114334A publication Critical patent/JPS56114334A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To evaluate the reliability of a surface protecting film by the extent of the formation of an intermetallic compound between Al or an Al alloy and Au. CONSTITUTION:When detecting the pinholes of a protecting film of PSG, SiO2, etc., Au is evaporated on a section covering an Al electrode and an Al alloy layer on an Si substrate in a range of 1000Angstrom -1mu. Th reproducibility of accurate evaluation is obtained within the range thereof. When the whole is heated for two min. or more at 350-500 deg.C and an Au-Al intermetallic compound is formed, the compound can easily be recognized by means of an optical microscope. When there exist pinholes, the reliability of the protecting film can accurately be evaluated quickly because the compound is formed at the locations in accordance with the dimensions of the pinhole.
JP1752980A 1980-02-15 1980-02-15 Evaluating method for reliability of surface protecting film of semiconductor element Pending JPS56114334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1752980A JPS56114334A (en) 1980-02-15 1980-02-15 Evaluating method for reliability of surface protecting film of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1752980A JPS56114334A (en) 1980-02-15 1980-02-15 Evaluating method for reliability of surface protecting film of semiconductor element

Publications (1)

Publication Number Publication Date
JPS56114334A true JPS56114334A (en) 1981-09-08

Family

ID=11946443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1752980A Pending JPS56114334A (en) 1980-02-15 1980-02-15 Evaluating method for reliability of surface protecting film of semiconductor element

Country Status (1)

Country Link
JP (1) JPS56114334A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519388B2 (en) 2007-12-17 2013-08-27 Nxp B.V. Embedded structure for passivation integrity testing
CN107958862A (en) * 2016-10-18 2018-04-24 台湾积体电路制造股份有限公司 Semiconductor is with gauge, the gauge and method of the protective layer pin hole test of semiconductor
CN111524824A (en) * 2020-04-28 2020-08-11 上海华力集成电路制造有限公司 Method for detecting pinhole defect of atomic layer deposition film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5431283A (en) * 1977-08-15 1979-03-08 Toshiba Corp Pinhole detecting method for insulator film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5431283A (en) * 1977-08-15 1979-03-08 Toshiba Corp Pinhole detecting method for insulator film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8519388B2 (en) 2007-12-17 2013-08-27 Nxp B.V. Embedded structure for passivation integrity testing
CN107958862A (en) * 2016-10-18 2018-04-24 台湾积体电路制造股份有限公司 Semiconductor is with gauge, the gauge and method of the protective layer pin hole test of semiconductor
CN107958862B (en) * 2016-10-18 2021-11-09 台湾积体电路制造股份有限公司 Jig for testing pin holes of protective layer of semiconductor, jig for testing pin holes of protective layer of semiconductor and method for testing pin holes of protective layer of semiconductor
CN111524824A (en) * 2020-04-28 2020-08-11 上海华力集成电路制造有限公司 Method for detecting pinhole defect of atomic layer deposition film
CN111524824B (en) * 2020-04-28 2023-04-07 上海华力集成电路制造有限公司 Method for detecting pinhole defect of atomic layer deposition film

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