CN111524824B - Method for detecting pinhole defect of atomic layer deposition film - Google Patents
Method for detecting pinhole defect of atomic layer deposition film Download PDFInfo
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- CN111524824B CN111524824B CN202010349287.4A CN202010349287A CN111524824B CN 111524824 B CN111524824 B CN 111524824B CN 202010349287 A CN202010349287 A CN 202010349287A CN 111524824 B CN111524824 B CN 111524824B
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- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention discloses a method for detecting pinhole defects of an atomic layer deposition film, which comprises the following steps: step one, forming a film on a blank wafer by adopting an atomic layer deposition process; step two, carrying out selective epitaxial growth to fill a first epitaxial layer in each pinhole, wherein the first epitaxial layer can also extend out of the pinholes so as to form a defect amplification structure, and the size of each defect amplification structure is positioned in the measurement range of a defect scanning machine; and step three, detecting each defect amplifying structure by using a defect scanning machine, obtaining a distribution diagram of each defect amplifying structure and using the distribution diagram as the distribution diagram of the pinhole defects. The invention can detect the pinhole defect smaller than the measurement range of the defect scanning machine in the film, thereby improving the film quality of atomic layer deposition.
Description
Technical Field
The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for detecting pinhole defects in an atomic layer deposition film.
Background
As technology nodes continue to decrease, only thicknesses of
The ultra-thin film is usually grown by an Atomic Layer Deposition (ALD) process, and pinhole (pinhole) defects are inevitably generated. FIG. 1 is a cross-sectional view of a conventional atomic layer deposition film with pinhole defects; FIG. 2 is a corresponding perspective view of FIG. 1; as can be seen, a thin film 102 formed by an atomic layer deposition process is formed on a blank wafer composed of a semiconductor substrate 101, and a pinhole 103 defect caused by the atomic layer deposition process exists in the thin film 102.
Generally, the size, such as the width or the diameter, of the pinhole 103 is smaller than the measurement range of a defect scanning (defect scan) machine, at present, the measurement range of the defect scanning machine is more than 17nm, and when the width or the diameter of the pinhole 103 is less than 17nm, the pinhole cannot be detected by the defect scanning machine, and cannot be directly detected by means of TEM or the like.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for detecting the pinhole defect of an atomic layer deposition film, which can detect the pinhole defect of the film smaller than the measurement range of a defect scanning machine, thereby improving the quality of the atomic layer deposition film.
In order to solve the technical problem, the method for detecting the pinhole defect of the atomic layer deposition film provided by the invention comprises the following steps:
step one, forming a film on a blank wafer (blank wafer) consisting of a semiconductor substrate by adopting an atomic layer deposition process, wherein the film has a pinhole defect caused by the atomic layer deposition process.
And secondly, performing selective epitaxial growth to fill a first epitaxial layer in each pinhole, wherein the first epitaxial layer can extend to the surface of the film outside the pinhole after filling the corresponding pinhole so as to form a defect amplifying structure, and the size of each defect amplifying structure is within the measuring range of a defect scanning machine.
And step three, detecting each defect amplifying structure by using the defect scanning machine and obtaining a distribution diagram of each defect amplifying structure, wherein the distribution diagram of the defect amplifying structure is used as the distribution diagram of the pinhole defect.
In a further improvement, the semiconductor substrate is a silicon substrate.
In a further improvement, the first epitaxial layer is a silicon epitaxial layer.
The further improvement is that the measuring range of the defect scanning machine is more than 17 nm.
In a further improvement, the film is of a thickness of
An ultrathin film of (2).
In a further refinement, the material of the membrane comprises silicon oxide or silicon nitride.
In a further improvement, the number of pinhole defects in the thin film is multiple, the size of each pinhole defect is equal or unequal, and the pinhole defects with the width or the diameter of less than 17nm are included in the thin film.
In a further improvement, each of the defect amplifying structures has a width or diameter of 17nm or more.
In a further improvement, after the third step is completed, the atomic layer deposition process is adjusted according to the distribution map of the pinhole defects to reduce the pinhole defects.
The further improvement is that the ultrathin film is applied to the process of a semiconductor device with a technical node below 28 nm.
The further improvement is that the ultrathin film is adopted as a gate dielectric layer in the semiconductor device process.
In a further improvement, a gate conductive material layer is formed on the surface of the gate dielectric layer.
In a further improvement, the gate conductive material layer is a polysilicon gate or a metal gate.
In a further improvement, the source region and the drain region are formed in self-alignment on both sides of the gate conductive material layer.
In a further improvement, in the second step, the first epitaxial layer grows from the bottom to the top of the surface of the blank wafer exposed by the pinhole defect, and the pinhole defect is completely filled by the first epitaxial layer.
According to the invention, the film is formed on the blank wafer, then selective epitaxial growth is carried out, when a pinhole defect exists in the film, a first epitaxial layer grows upwards from the bottom on the surface of the blank wafer in the pinhole, and after the pinhole is filled up by the first epitaxial layer, the first epitaxial layer extends to the surface of the film outside the pinhole so as to form a defect amplification structure.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a cross-sectional view of a prior art atomic layer deposited film having pinhole defects;
FIG. 2 is a corresponding perspective view of FIG. 1;
FIG. 3 is a flow chart of a method of an embodiment of the present invention;
FIGS. 4A-4B are cross-sectional views of a film layer at various steps of a method for detecting pinhole defects in an ALD film in accordance with an embodiment of the present invention;
FIG. 5A is a perspective view corresponding to FIG. 4A;
fig. 5B is a perspective view corresponding to fig. 4B.
Detailed Description
FIG. 3 is a flow chart of a method according to an embodiment of the present invention; as shown in fig. 4A to 4B, which are cross-sectional structural diagrams of the film layer in each step of the method for detecting pinhole 3 defects in the atomic layer deposition film 2 according to the embodiment of the invention; FIG. 5A is a perspective view corresponding to FIG. 4A; fig. 5B is a perspective view corresponding to fig. 4B. The method for detecting the pinhole 3 defect of the atomic layer deposition film 2 comprises the following steps:
step one, as shown in fig. 4A, a thin film 2 is formed on a blank wafer composed of a semiconductor substrate 1 by adopting an atomic layer deposition process, and a pinhole 3 defect caused by the atomic layer deposition process exists in the thin film 2.
In the method of the embodiment of the invention, the semiconductor substrate 1 is a silicon substrate.
The film 2 has a thickness of
An ultrathin film of (2).
The material of the membrane 2 comprises silicon oxide or silicon nitride.
The film 2 is provided with a plurality of pinhole 3 defects, the size of each pinhole 3 defect is equal or unequal, and the film 2 comprises the pinhole 3 defects with the width or the diameter of less than 17 nm.
Step two, as shown in fig. 4B, performing selective epitaxial growth to fill the first epitaxial layer 4 in each pinhole 3, wherein the first epitaxial layer 4 extends to the surface of the thin film 2 outside the pinhole 3 after filling the corresponding pinhole 3, so as to form defect amplifying structures 4a, and the size of each defect amplifying structure 4a is within the measurement range of the defect scanning machine.
In the method of the embodiment of the invention, the first epitaxial layer 4 is a silicon epitaxial layer. The first epitaxial layer 4 grows from the bottom to the top of the blank wafer surface exposed by the pinhole 3 defect, and the pinhole 3 defect is completely filled by the first epitaxial layer 4.
The measuring range of the defect scanning machine is more than 17 nm.
Each of the defect amplifying structures 4a has a width or a diameter of 17nm or more.
And step three, detecting each defect amplifying structure 4a by using the defect scanning machine, obtaining a distribution diagram of each defect amplifying structure 4a, and taking the distribution diagram of each defect amplifying structure 4a as the distribution diagram of the defects of the pinholes 3.
And after the third step is finished, adjusting the atomic layer deposition process according to the distribution map of the pinhole 3 defects so as to reduce the pinhole 3 defects.
In the method of the embodiment of the invention, the ultrathin film is applied to the process of a semiconductor device with a technical node below 28 nm. Preferably, the gate dielectric layer in the semiconductor device process adopts the ultrathin film.
And forming a grid electrode conductive material layer on the surface of the grid electrode dielectric layer.
The grid electrode conducting material layer is a polysilicon grid or a metal grid.
And a source region and a drain region are formed on two sides of the grid conducting material layer in a self-aligned mode.
According to the embodiment of the invention, the film 2 is formed on the blank wafer, selective epitaxial growth is carried out, when the pinhole 3 defect exists in the film 2, the first epitaxial layer 4 grows from the bottom to the top of the surface of the blank wafer in the pinhole 3, and after the pinhole 3 is filled in the first epitaxial layer 4, the first epitaxial layer 4 extends to the surface of the film 2 outside the pinhole 3 to form the defect amplifying structure 4a, and as the positions of the defect amplifying structure 4a and the pinhole 3 defect are in one-to-one correspondence, and the defect amplifying structure 4a can be detected by using the defect scanning machine after being amplified in size, the defect amplifying structure 4a can be detected by using the defect scanning machine to obtain the distribution diagram of the pinhole 3 defect, so that the embodiment of the invention can realize the detection of the pinhole 3 defect when the size of the pinhole 3 is smaller than the measuring range of the defect scanning machine, and finally can improve the quality of the film 2 deposited by the atomic layer.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (12)
1. A method for detecting pinhole defects of an atomic layer deposition film is characterized by comprising the following steps:
forming a film on a blank wafer consisting of a semiconductor substrate by adopting an atomic layer deposition process, wherein the film has a pinhole defect caused by the atomic layer deposition process;
the film is an ultra-thin film with a thickness of 10-20A;
the number of the pinhole defects in the film is multiple, the sizes of the pinhole defects are equal or unequal, and the pinhole defects with the width or the diameter of less than 17nm are included in the film;
step two, carrying out selective epitaxial growth to fill a first epitaxial layer in each pinhole, wherein the first epitaxial layer grows from the bottom to the top of the surface of the blank wafer in the pinhole, the first epitaxial layer can extend to the surface of the film outside the pinhole after filling the corresponding pinhole so as to form a defect amplifying structure, and the size of each defect amplifying structure is positioned in the measuring range of a defect scanning machine;
and step three, detecting each defect amplifying structure by using the defect scanning machine and obtaining a distribution diagram of each defect amplifying structure, wherein the distribution diagram of the defect amplifying structure is used as the distribution diagram of the pinhole defect.
2. The method of detecting pinhole defects in an atomic layer deposition film according to claim 1, wherein: the semiconductor substrate is a silicon substrate.
3. The method of detecting pinhole defects in an atomic layer deposition film according to claim 2, wherein: the first epitaxial layer is a silicon epitaxial layer.
4. The method of detecting pinhole defects in an atomic layer deposition film according to claim 1, wherein: the measuring range of the defect scanning machine is more than 17 nm.
5. The method of detecting pinhole defects in an atomic layer deposition film according to claim 3, wherein: the material of the film comprises silicon oxide or silicon nitride.
6. The method of detecting pinhole defects in an atomic layer deposition film according to claim 4, wherein: the width or diameter of each defect amplifying structure is 17nm or more.
7. The method of detecting pinhole defects in an atomic layer deposition film according to claim 3 or 5, wherein: and after the third step is finished, adjusting the atomic layer deposition process according to the distribution map of the pinhole defects so as to reduce the pinhole defects.
8. The method of detecting pinhole defects in an atomic layer deposition film according to claim 1, wherein: the ultrathin film is applied to the process of a semiconductor device with a technical node below 28 nm.
9. The method of detecting pinhole defects in an atomic layer deposition film according to claim 8, wherein: the gate dielectric layer in the semiconductor device process adopts the ultrathin film.
10. The method of detecting pinhole defects in an atomic layer deposition film according to claim 9, wherein: and forming a grid electrode conductive material layer on the surface of the grid electrode dielectric layer.
11. The method of detecting pinhole defects in an atomic layer deposition film according to claim 10, wherein: the grid electrode conducting material layer is a polysilicon grid or a metal grid.
12. The method of detecting pinhole defects in an atomic layer deposition film according to claim 10, wherein: and the source region and the drain region are formed on two sides of the grid conducting material layer in a self-aligned mode.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114334A (en) * | 1980-02-15 | 1981-09-08 | Toshiba Corp | Evaluating method for reliability of surface protecting film of semiconductor element |
| US6596553B1 (en) * | 2002-06-26 | 2003-07-22 | Advanced Micro Devices, Inc. | Method of pinhole decoration and detection |
| CN104851820A (en) * | 2014-02-19 | 2015-08-19 | 北大方正集团有限公司 | Semiconductor device defect detection method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8519260B2 (en) * | 2010-07-08 | 2013-08-27 | International Business Machines Corporation | Method to evaluate effectiveness of substrate cleanness and quantity of pin holes in an antireflective coating of a solar cell |
| US10249546B2 (en) * | 2016-07-20 | 2019-04-02 | Kla-Tencor Corporation | Reverse decoration for defect detection amplification |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56114334A (en) * | 1980-02-15 | 1981-09-08 | Toshiba Corp | Evaluating method for reliability of surface protecting film of semiconductor element |
| US6596553B1 (en) * | 2002-06-26 | 2003-07-22 | Advanced Micro Devices, Inc. | Method of pinhole decoration and detection |
| CN104851820A (en) * | 2014-02-19 | 2015-08-19 | 北大方正集团有限公司 | Semiconductor device defect detection method |
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