JPH0577973B2 - - Google Patents
Info
- Publication number
- JPH0577973B2 JPH0577973B2 JP27138688A JP27138688A JPH0577973B2 JP H0577973 B2 JPH0577973 B2 JP H0577973B2 JP 27138688 A JP27138688 A JP 27138688A JP 27138688 A JP27138688 A JP 27138688A JP H0577973 B2 JPH0577973 B2 JP H0577973B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- optical fiber
- sensitive substance
- temperature sensor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013307 optical fiber Substances 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、光フアイバを利用して温度を測定
する光フアイバ温度センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical fiber temperature sensor that measures temperature using an optical fiber.
［従来の技術］
従来、光フアイバを利用した温度センサとし
て、光フアイバの端面に、GaAs、CdTe等の半
導体結晶板を接着し、この半導体結晶板を感温物
質とし、光を投受光してその反射率または透過率
の変化から温度を測定するものがある。[Prior art] Conventionally, as a temperature sensor using an optical fiber, a semiconductor crystal plate of GaAs, CdTe, etc. is bonded to the end face of the optical fiber, and this semiconductor crystal plate is used as a temperature-sensitive material to emit and receive light. Some devices measure temperature from changes in reflectance or transmittance.
［発明が解決しようとする課題］
しかしながら、半導体結晶板を用いると光フア
イバ端面との接着が難しく、製作技術を要し、耐
熱性にも問題があつた。また、GaAs等の半導体
結晶の薄膜では、反射率、透過率の変化が生じる
吸収端の立上りを鋭くし、薄膜による干渉の影響
を除くため、厚さが数＋μm以上の結晶性の良好
な膜が必要であり、製作が困難である問題点があ
つた。[Problems to be Solved by the Invention] However, when a semiconductor crystal plate is used, it is difficult to bond it to the end face of an optical fiber, requiring a manufacturing technique, and there are also problems in heat resistance. In addition, in thin films of semiconductor crystals such as GaAs, in order to sharpen the rise of the absorption edge that causes changes in reflectance and transmittance and eliminate the effects of interference due to the thin film, a film with good crystallinity with a thickness of several micrometers or more is required. However, there was a problem in that it was difficult to manufacture.
この発明の目的は、以上の点に鑑み、製作が容
易で、小型、耐熱性のある光フアイバ温度センサ
を提供することである。 In view of the above points, an object of the present invention is to provide an optical fiber temperature sensor that is easy to manufacture, small in size, and heat resistant.
［課題を解決するための手段］
この発明は、光フアイバを利用して感温物質に
投受光しその反射率または透過率の変化から温度
を測定する光フアイバ温度センサにおいて、感温
物質として水素化またはフツソ化したアモルフア
スSi系材料の薄膜を用いるようにしたものであ
る。[Means for Solving the Problems] The present invention provides an optical fiber temperature sensor that uses an optical fiber to emit and receive light onto a temperature-sensitive substance and measure temperature from changes in its reflectance or transmittance, in which hydrogen is used as the temperature-sensitive substance. This method uses a thin film of amorphous Si-based material that has been oxidized or fused.
［作用］
製作が容易で、製作条件により各種特性の薄膜
が得られ、温度測定が可能となる。[Function] Easy to manufacture, thin films with various characteristics can be obtained depending on the manufacturing conditions, and temperature measurement is possible.
［実施例］
第１図は、この発明の一実施例を示す構成説明
図である。[Embodiment] FIG. 1 is a configuration explanatory diagram showing an embodiment of the present invention.
図において、光フアイバ１の端部に、感温物質
２としての水素化またはフツソ化したアモルフア
スシリコン系の材料（ａ−Si：Ｈ、ａ−SiN：
Ｈ、ａ−SiC；Ｈ、ａ−SiGe：Ｈ等）の薄膜を
0.05〜0.3μm程度、CVD、スパツタ、イオンプレ
ーテイング、蒸着等で形成し、さらにこの感温物
質２の上にAl，Cu，Au等の反射膜３を形成す
る。なお、この光フアイバ１の端部の薄膜の感温
物質２、反射膜３の全体に、適当な保護層４を形
成するとよい。 In the figure, a hydrogenated or fluorinated amorphous silicon material (a-Si:H, a-SiN:
H, a-SiC; H, a-SiGe: H, etc.) thin film
It is formed to a thickness of about 0.05 to 0.3 μm by CVD, sputtering, ion plating, vapor deposition, etc., and a reflective film 3 of Al, Cu, Au, etc. is further formed on this temperature sensitive material 2. Incidentally, it is preferable to form an appropriate protective layer 4 over the entirety of the thin film temperature-sensitive material 2 and the reflective film 3 at the end of the optical fiber 1.
このような薄膜の感温物質２、光フアイバ１を
介して図示しない光源から光を投光し、その反射
光または透過光を図示しない検出器で測定する。 Light is emitted from a light source (not shown) through the thin film temperature-sensitive material 2 and optical fiber 1, and the reflected or transmitted light is measured by a detector (not shown).
この感温物質２の温度Ｔによる光学特性は、第
３図で示すように、温度Ｔにより吸収端での傾き
部分が移動して変化し、この傾き部分の適当な波
長を測定波長として測定することにより、温度に
対する反射率変化が求まり、これより温度を測定
することができる。なお、温度依存性の少い、波
長を参照波長として測定波長との比較から測温し
てもよい。 As shown in FIG. 3, the optical characteristics of the temperature-sensitive substance 2 depending on the temperature T change as the slope at the absorption edge moves and changes depending on the temperature T, and the appropriate wavelength of this slope is measured as the measurement wavelength. By doing this, the reflectance change with respect to temperature can be determined, and the temperature can be measured from this. Note that the temperature may be measured by using a wavelength with little temperature dependence as a reference wavelength and comparing it with the measurement wavelength.
このアモルフアスSi系の材料の感温物質２は、
短波長側での吸収が大であるので、0.1μm程度の
薄膜でも吸収端の傾きを大きくとれ、干渉の影響
が少く、感度が大きくとれる。また、水素化度、
薄膜の制御等により、反射率の変化領域を光源、
素子に合わせることができ、測定系の設計、構築
が容易となる。 This temperature-sensitive substance 2 made of amorphous Si-based material is
Since absorption is large on the short wavelength side, even with a thin film of about 0.1 μm, the slope of the absorption edge can be increased, the influence of interference is small, and sensitivity can be increased. In addition, the degree of hydrogenation,
By controlling the thin film, the area of change in reflectance can be controlled by the light source,
It can be matched to the element, making it easy to design and construct the measurement system.
第２図は、他の一実施例を示し、第１図の実施
例において、感温物質２と反射膜３との間に
SiO2膜５をバツフア層として形成した。このよ
うにすることにより、高温使用時において、感温
物質２と反射膜３との相互拡散による特性変化を
防止でき、温度センサの耐熱特性を向上させるこ
とができる。 FIG. 2 shows another embodiment, in which in the embodiment of FIG.
A SiO 2 film 5 was formed as a buffer layer. By doing so, it is possible to prevent characteristic changes due to mutual diffusion between the temperature-sensitive substance 2 and the reflective film 3 during high-temperature use, and it is possible to improve the heat resistance characteristics of the temperature sensor.
［発明の効果］
以上述べたように、この発明は、光フアイバ温
度センサの感温物質として、アモルフアスSi系の
材料を用いたもので、薄膜でも吸収端の立ち上り
特性がよく高感度のものとなり、また、材料、水
素化度、膜厚の制御等により反射、吸収特性のコ
ントロールができ、光源等に合わせ任意の測定波
長範囲とでき、各種用途に応じたものが実現でき
る。また、薄膜技術により製造が容易で、量産に
向き、小型、安価なものとなる。[Effects of the Invention] As described above, the present invention uses an amorphous Si-based material as the temperature-sensitive substance of an optical fiber temperature sensor, and even a thin film has good absorption edge rise characteristics and high sensitivity. In addition, the reflection and absorption characteristics can be controlled by controlling the material, degree of hydrogenation, film thickness, etc., and the measurement wavelength range can be adjusted to suit the light source, etc., making it possible to realize products suitable for various uses. In addition, thin film technology makes it easy to manufacture, suitable for mass production, small in size, and inexpensive.
第１図、第２図は、各々この発明の一実施例を
示す構成説明図、第３図は、特性説明図である。
１…光フアイバ、２…感温物質、３…反射膜、
４…保護層、５…SiO2膜。
1 and 2 are configuration explanatory diagrams showing one embodiment of the present invention, and FIG. 3 is a characteristic diagram. 1... Optical fiber, 2... Temperature-sensitive substance, 3... Reflective film,
4...Protective layer, 5...SiO 2 film.
Claims (1)
しその反射率または透過率の変化から温度を測定
する光フアイバ温度センサにおいて、感温物質と
して水素化またはフツソ化したアモルフアスSi系
材料で膜厚が0.05〜0.3μmの薄膜を用いた光フア
イバ温度センサ。 ２ 光フアイバの端面に感温物質を形成し、その
上に反射膜を形成した請求項１記載の光フアイバ
温度センサ。 ３ 感温物質と反射膜との間にSiO2膜を設けた
請求項２記載の光フアイバ温度センサ。[Claims] 1. In an optical fiber temperature sensor that uses an optical fiber to project and receive light onto a temperature-sensitive substance and measure temperature from changes in its reflectance or transmittance, the temperature-sensitive substance is hydrogenated or fluorinated. Optical fiber temperature sensor using a thin film of amorphous Si-based material with a thickness of 0.05 to 0.3 μm. 2. The optical fiber temperature sensor according to claim 1, wherein a temperature-sensitive substance is formed on the end face of the optical fiber, and a reflective film is formed thereon. 3. The optical fiber temperature sensor according to claim 2, wherein an SiO 2 film is provided between the temperature-sensitive substance and the reflective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27138688A JPH02116727A (en) | 1988-10-27 | 1988-10-27 | Optical fiber temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27138688A JPH02116727A (en) | 1988-10-27 | 1988-10-27 | Optical fiber temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02116727A JPH02116727A (en) | 1990-05-01 |
| JPH0577973B2 true JPH0577973B2 (en) | 1993-10-27 |
Family
ID=17499350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27138688A Granted JPH02116727A (en) | 1988-10-27 | 1988-10-27 | Optical fiber temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02116727A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19534440A1 (en) * | 1995-09-16 | 1997-03-20 | Bergmann Hans Wilhelm | Contactless measurement of temperature of coloured material |
| CN101803910A (en) * | 2010-04-08 | 2010-08-18 | 南昌航空大学 | Temperature probe for medical endoscope |
-
1988
- 1988-10-27 JP JP27138688A patent/JPH02116727A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02116727A (en) | 1990-05-01 |
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