JPS56112769A - Manufacture of light emitting diode - Google Patents

Manufacture of light emitting diode

Info

Publication number
JPS56112769A
JPS56112769A JP1553780A JP1553780A JPS56112769A JP S56112769 A JPS56112769 A JP S56112769A JP 1553780 A JP1553780 A JP 1553780A JP 1553780 A JP1553780 A JP 1553780A JP S56112769 A JPS56112769 A JP S56112769A
Authority
JP
Japan
Prior art keywords
layer
type
type gaalas
dopant
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1553780A
Other languages
Japanese (ja)
Inventor
Noriyuki Shige
Masahiro Ichiki
Yoichi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1553780A priority Critical patent/JPS56112769A/en
Publication of JPS56112769A publication Critical patent/JPS56112769A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain an infrared ray emitting element having high efficiency, high light output and stable electric characteristics by setting the carrier density of an n type GaAlAs layer making contact with a p type GaAlAs metal compound semiconductor layer as a dopant at 6X10<16>-1X10<18>atom.cm<-3>. CONSTITUTION:The light emitting diode is formed by forming a p type GaAlAs layer 2 and an n type GaAlAs layer 3 by a liquid phase epitaxial growth on a p type GaAlAs substrate 1 and then forming an n<+> type contact part 4 and a p<+> type contact part 5 thereat. When the layer 3 is formed, the absolute difference value ¦ND-NA¦ between the carrier density and hence the doner density and the acceptor density as a dopant is set in the range from 6X10<16> to 1X10<18>atom.cm<-3>. The dopant may include impurity elements such as Sn, Te, Se, Si or the like.
JP1553780A 1980-02-13 1980-02-13 Manufacture of light emitting diode Pending JPS56112769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1553780A JPS56112769A (en) 1980-02-13 1980-02-13 Manufacture of light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1553780A JPS56112769A (en) 1980-02-13 1980-02-13 Manufacture of light emitting diode

Publications (1)

Publication Number Publication Date
JPS56112769A true JPS56112769A (en) 1981-09-05

Family

ID=11891545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1553780A Pending JPS56112769A (en) 1980-02-13 1980-02-13 Manufacture of light emitting diode

Country Status (1)

Country Link
JP (1) JPS56112769A (en)

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