JPS56110260A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56110260A
JPS56110260A JP1265780A JP1265780A JPS56110260A JP S56110260 A JPS56110260 A JP S56110260A JP 1265780 A JP1265780 A JP 1265780A JP 1265780 A JP1265780 A JP 1265780A JP S56110260 A JPS56110260 A JP S56110260A
Authority
JP
Japan
Prior art keywords
type
region
layers
transistor
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1265780A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6148269B2 (enrdf_load_stackoverflow
Inventor
Shoichi Shimizu
Kenichi Torii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1265780A priority Critical patent/JPS56110260A/ja
Publication of JPS56110260A publication Critical patent/JPS56110260A/ja
Publication of JPS6148269B2 publication Critical patent/JPS6148269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP1265780A 1980-02-05 1980-02-05 Semiconductor device Granted JPS56110260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1265780A JPS56110260A (en) 1980-02-05 1980-02-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1265780A JPS56110260A (en) 1980-02-05 1980-02-05 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56110260A true JPS56110260A (en) 1981-09-01
JPS6148269B2 JPS6148269B2 (enrdf_load_stackoverflow) 1986-10-23

Family

ID=11811422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1265780A Granted JPS56110260A (en) 1980-02-05 1980-02-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56110260A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200502A (ja) * 2009-03-19 2009-09-03 Hitachi Ltd 半導体集積回路装置およびその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6222911A (ja) * 1985-07-22 1987-01-31 Ngk Spark Plug Co Ltd セラミツクグロ−プラグ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200502A (ja) * 2009-03-19 2009-09-03 Hitachi Ltd 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
JPS6148269B2 (enrdf_load_stackoverflow) 1986-10-23

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