JPS6148269B2 - - Google Patents
Info
- Publication number
- JPS6148269B2 JPS6148269B2 JP55012657A JP1265780A JPS6148269B2 JP S6148269 B2 JPS6148269 B2 JP S6148269B2 JP 55012657 A JP55012657 A JP 55012657A JP 1265780 A JP1265780 A JP 1265780A JP S6148269 B2 JPS6148269 B2 JP S6148269B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- layers
- emitter
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 17
- 238000002955 isolation Methods 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 8
- 238000000605 extraction Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- DRSFVGQMPYTGJY-GNSLJVCWSA-N Deprodone propionate Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@@](C(C)=O)(OC(=O)CC)[C@@]1(C)C[C@@H]2O DRSFVGQMPYTGJY-GNSLJVCWSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1265780A JPS56110260A (en) | 1980-02-05 | 1980-02-05 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1265780A JPS56110260A (en) | 1980-02-05 | 1980-02-05 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56110260A JPS56110260A (en) | 1981-09-01 |
JPS6148269B2 true JPS6148269B2 (enrdf_load_stackoverflow) | 1986-10-23 |
Family
ID=11811422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1265780A Granted JPS56110260A (en) | 1980-02-05 | 1980-02-05 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56110260A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222911A (ja) * | 1985-07-22 | 1987-01-31 | Ngk Spark Plug Co Ltd | セラミツクグロ−プラグ |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5503168B2 (ja) * | 2009-03-19 | 2014-05-28 | 株式会社日立製作所 | 半導体集積回路装置 |
-
1980
- 1980-02-05 JP JP1265780A patent/JPS56110260A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6222911A (ja) * | 1985-07-22 | 1987-01-31 | Ngk Spark Plug Co Ltd | セラミツクグロ−プラグ |
Also Published As
Publication number | Publication date |
---|---|
JPS56110260A (en) | 1981-09-01 |
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