JPS5610974A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5610974A JPS5610974A JP8623679A JP8623679A JPS5610974A JP S5610974 A JPS5610974 A JP S5610974A JP 8623679 A JP8623679 A JP 8623679A JP 8623679 A JP8623679 A JP 8623679A JP S5610974 A JPS5610974 A JP S5610974A
- Authority
- JP
- Japan
- Prior art keywords
- film
- junction
- substrate
- curvature
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To contrive the improvement in the breakdown withstand voltage of the semiconductor device by implanting ion by utilizing the smooth stepwise difference of an oxide film produced upon selective oxidation of an Si substrate and decreasing the curvature of a P-N junction. CONSTITUTION:An Si3N4 mask 3 is formed on an SiO2 film 2 on an N-type Si substrate 1, is wet oxidized to form a swelled portion 2a. Then, the mask is removed, B ion is implanted to the depth deeper than the film 2 and more shallow than the swelled portion 2a and is uniformly distributed in a direction along the surface to form a P-type layer 5. A P-N junction 6 formed is formed in parallel with rugged surface, and is terminated with low curvature at the swelled film 2a at the end of the film 2. An opening is perforated at the film 2, an electrode 8 is attached therethrough, an electrode 9 is attached onto the back surface of the substrate, is cut at a line 7 to form chips. Since the curvature of the curved surface 10 is smooth according to this configuration to alleviate the electric field concentration end of the P-N junction is protected by the SiO2 film, it can im prove the breakdown withstand voltage of the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8623679A JPS5610974A (en) | 1979-07-06 | 1979-07-06 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8623679A JPS5610974A (en) | 1979-07-06 | 1979-07-06 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5610974A true JPS5610974A (en) | 1981-02-03 |
Family
ID=13881152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8623679A Pending JPS5610974A (en) | 1979-07-06 | 1979-07-06 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5610974A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871561A (en) * | 1995-05-31 | 1999-02-16 | Toyota Jidosha Kabushiki Kaisha | Method of treating dusts containing oxides |
-
1979
- 1979-07-06 JP JP8623679A patent/JPS5610974A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871561A (en) * | 1995-05-31 | 1999-02-16 | Toyota Jidosha Kabushiki Kaisha | Method of treating dusts containing oxides |
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