JPS56108233A - Electron-beam lithography apparatus - Google Patents

Electron-beam lithography apparatus

Info

Publication number
JPS56108233A
JPS56108233A JP1005080A JP1005080A JPS56108233A JP S56108233 A JPS56108233 A JP S56108233A JP 1005080 A JP1005080 A JP 1005080A JP 1005080 A JP1005080 A JP 1005080A JP S56108233 A JPS56108233 A JP S56108233A
Authority
JP
Japan
Prior art keywords
lithography
pattern
minute area
collectively
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1005080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241417B2 (enExample
Inventor
Shigemasa Shimura
Soichiro Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1005080A priority Critical patent/JPS56108233A/ja
Publication of JPS56108233A publication Critical patent/JPS56108233A/ja
Publication of JPS6241417B2 publication Critical patent/JPS6241417B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP1005080A 1980-02-01 1980-02-01 Electron-beam lithography apparatus Granted JPS56108233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1005080A JPS56108233A (en) 1980-02-01 1980-02-01 Electron-beam lithography apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1005080A JPS56108233A (en) 1980-02-01 1980-02-01 Electron-beam lithography apparatus

Publications (2)

Publication Number Publication Date
JPS56108233A true JPS56108233A (en) 1981-08-27
JPS6241417B2 JPS6241417B2 (enExample) 1987-09-02

Family

ID=11739563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1005080A Granted JPS56108233A (en) 1980-02-01 1980-02-01 Electron-beam lithography apparatus

Country Status (1)

Country Link
JP (1) JPS56108233A (enExample)

Also Published As

Publication number Publication date
JPS6241417B2 (enExample) 1987-09-02

Similar Documents

Publication Publication Date Title
GB1483171A (en) Producing patterns with an electron beam
EP0178156A2 (en) Method of drawing a desired pattern on a target through exposure thereof with an electron beam
KR20010006492A (ko) 가스 지원 포커싱된 입자 빔 시스템을 사용하는 패턴닝된 필름 교정
EP0797236A3 (en) A charged particle beam exposure method and an apparatus therefor
US4151422A (en) Electron beam exposure method
US4445039A (en) High throughput/high resolution particle beam system
JPS57138757A (en) Correction of deflection distortion
EP0377298A3 (en) Uniform cross section ion beam system
TW364154B (en) Electron beam writing method and apparatus for carrying out the same
JPS56108233A (en) Electron-beam lithography apparatus
JPS5694630A (en) Etching method using ion-beam
US20010017355A1 (en) Electron beam lithography apparatus and lithography method
EP0153864A2 (en) A method of electron beam exposure
EP0571727A1 (en) Apparatus and method for focussed ion beam deposition by controlling beam parameters
JPS6427227A (en) Method and apparatus for charged beam lithography
JPS5712521A (en) Drawing device of figure by electron beam
US20020177055A1 (en) Charged particle processing for forming pattern boundaries at a uniform thickness
JPS63185027A (ja) 荷電粒子ビーム描画方法
JPS57122528A (en) Drawing system for electron beam exposure apparatus
JPS57211232A (en) Raster scanning type electron beam exposure
JPS60253138A (ja) イオン・ビ−ム装置
JPS5642343A (en) Exposing method of electron beam
JPH0586850B2 (enExample)
JPS5727026A (en) Ion implantation
JPS57208133A (en) Electron-beam exposure method