JPS56107639A - Solid switch - Google Patents
Solid switchInfo
- Publication number
- JPS56107639A JPS56107639A JP1028780A JP1028780A JPS56107639A JP S56107639 A JPS56107639 A JP S56107639A JP 1028780 A JP1028780 A JP 1028780A JP 1028780 A JP1028780 A JP 1028780A JP S56107639 A JPS56107639 A JP S56107639A
- Authority
- JP
- Japan
- Prior art keywords
- photothyristor
- transistor
- cathode
- turned
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To operate the photothyristor with high dV/dt and high sensitivity, by connecting a transistor controlled by the phototransistor, between the gate and cathode of the photothyristor which is turned on by an optical signal. CONSTITUTION:When a light beam is not emitted from the light emission diode 1, a base current flows into the base of the transistor 6 through the current control element 8, the transistor 6 is turned on, and the gate and cathode of the photothyristor 3 is short-circuited. Accordingly, as for the photothyristor 3, dV/dt becomes extremely high since the grid and cathode is short-circuited. Subsequently, when an optical signal 2 is output from the light emission diode 1, the phototransistor 7 is turned on, and the base and emitter of the transistor 6 is short-circuited. Therefore, the transistor 6 is turned off, and the gate and cathode of the photothyristor 3 are released. Accordingly, the gate trigger sensitivity IFT of the photothyristor 3 becomes extremely high.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1028780A JPS56107639A (en) | 1980-01-31 | 1980-01-31 | Solid switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1028780A JPS56107639A (en) | 1980-01-31 | 1980-01-31 | Solid switch |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56107639A true JPS56107639A (en) | 1981-08-26 |
Family
ID=11746088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1028780A Pending JPS56107639A (en) | 1980-01-31 | 1980-01-31 | Solid switch |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56107639A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246020B1 (en) | 1997-06-30 | 2001-06-12 | Kabushiki Kaisha Saginomiya Seisakusho | Micro switch having silver containing contacts |
-
1980
- 1980-01-31 JP JP1028780A patent/JPS56107639A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246020B1 (en) | 1997-06-30 | 2001-06-12 | Kabushiki Kaisha Saginomiya Seisakusho | Micro switch having silver containing contacts |
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